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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-16T06:16:17Z |
Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer
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Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen |
| 國立交通大學 |
2014-12-16T06:16:05Z |
Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer
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Chang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-16T06:16:04Z |
Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrate
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Luo, Guangli; Chien, Chao-Hsin; Yang, Tsung-Hsi; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:15:35Z |
Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes
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Ferng, Shyh-Shin; Yang, Tsung-Hsi; Luo, Guangli; Yang, Kai-Ming; Hsieh, Ming-Feng; Lin, Deng-Sung |
Showing items 1-4 of 4 (1 Page(s) Totally)
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