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| 國立成功大學 |
2002 |
Room temperature oxidation of Cu3Ge films grown on Si and Si1-xGex substrates
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Liang, Hsuan-Han; Luo, Jian-Shing; Lin, Wen-Tai |
| 國立成功大學 |
2001-02 |
Room temperature oxidation of Cu3Ge and Cu-3(Si1-xGex) on Si1-xGex
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Liang, Hsuan-Han; Luo, Jian-Shing; Lin, Wen-Tai |
| 國立成功大學 |
2000-12 |
Improvement of the (111) texture and microstructures of Cu films by pulsed laser annealing
|
Hsieh, Yung-Wei; Luo, Jian-Shing; Lin, Wen-Tai; Chang, T. C.; Pan, F. M. |
| 國立成功大學 |
2000-10 |
Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing
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Huang, Jun-Chieh; Luo, Jian-Shing; Lin, Wen-Tai; Chang, C. Y.; Shih, P. S. |
| 國立成功大學 |
2000-06 |
Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing
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Luo, Jian-Shing; Lin, Wen-Tai; Chang, C. Y.; Shih, P. S. |
| 國立成功大學 |
2000-06 |
Pulsed KrF laser annealing of Mo/Si0.76Ge0.24
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Luo, Jian-Shing; Lin, Wen-Tai; Chang, C. Y.; Shih, P. S.; Chang, T. C. |
| 國立成功大學 |
2000-01 |
Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy
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Luo, Jian-Shing; Lin, Wen-Tai; Chang, C. Y.; Shih, P. S.; Pan, F. M. |
| 國立成功大學 |
1999-07-16 |
Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
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Luo, Jian-Shing; Lin, Wen-Tai; Chang, C. Y.; Shih, P. S.; Pan, F. M.; Chang, T. C. |
| 國立成功大學 |
1999-06-01 |
Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C
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Luo, Jian-Shing; Lin, Wen-Tai; Chang, C. Y.; Shih, P. S. |
| 國立成功大學 |
1998-07 |
Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing
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Luo, Jian-Shing; Lin, Wen-Tai; Chang, C. Y.; Tsai, W. C. |
Showing items 1-10 of 10 (1 Page(s) Totally)
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