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| 國立交通大學 |
2019-04-02T06:04:28Z |
Electrical Properties of Compound 2D Semiconductor Mo1-xNbxS2
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Lu, Peng; Ho, Yen Teng; Chu, Yung-Ching; Zhang, Ming; Chien, Po-Yen; Luong, Tien-Tung; Chang, Edward Yi; Woo, Jason C. S. |
| 國立交通大學 |
2019-04-02T06:04:19Z |
Growth and Fabrication of AlGaN/GaN HEMT on SiC Substrate
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Wong, Yuen-Yee; Chiu, Yu-Sheng; Luong, Tien-Tung; Lin, Tai-Ming; Ho, Yen-Teng; Lin, Yue-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:56:49Z |
WAFER SIZE MOS2 WITH FEW MONOLAYER SYNTHESIZED BY H2S SULFURIZATION
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Ho, Yen-Teng; Chu, Yung-Ching; Wei, Lin-Lung; Luong, Tien-Tung; Lin, Chih-Chien; Cheng, Chun-Hung; Hsu, Hung-Ru; Tu, Yung-Yi; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:56:49Z |
BUFFER-OPTIMIZED IMPROVEMENT IN RF LOSS OF ALGAN/GAN HEMTS ON 4-INCH SILICON (111)
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Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:54:31Z |
Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers
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Chang, Shane; Wei, Lin Lung; Luong, Tien Tung; Chang, Ching; Chang, Li |
| 國立交通大學 |
2018-08-21T05:54:17Z |
RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interface
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Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Weng, You-Chen; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD
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Luong, Tien Tung; Ho, Yen-Teng; Wong, Yuen-Yee; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2017-04-21T06:48:55Z |
POST SULFURIZATION EFFECT ON THE MOS2 GROWN BY PULSED LASER DEPOSITION
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Ho, Yen-Teng; Yen, Tzu-Chun; Luong, Tien-Tung; Wei, Lin-Lung; Tu, Yung-Yi; Chu, Yung-Ching; Hsu, Hung-Ru; Chang, Edward Yi |
| 國立交通大學 |
2015-11-26T00:56:13Z |
金屬有機氣相沉積成長技術在氮化鎵基高電子遷移電晶體之應用
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呂憲中; Luong,Tien-Tung; 張立; Chang, Edward Yi |
| 國立交通大學 |
2015-07-21T08:29:38Z |
2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an AlN Buffer Layer and Effects of Surface Pre-Treatments
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Luong, Tien-Tung; Binh Tinh Tran; Ho, Yen-Teng; Wei, Ting-Wei; Wu, Yue-Han; Yen, Tzu-Chun; Wei, Lin-Lung; Maa, Jer-Shen; Chang, Edward Yi |
Showing items 1-10 of 17 (2 Page(s) Totally)
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