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机构 日期 题名 作者
臺大學術典藏 2021-12-30T03:02:05Z 2 um electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction M. H. Liao; T.-H. Cheng; C. W. Liu; Lingyen Yeh; T.-L. Lee; M.-S. Liang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:05Z A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:04Z Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatment C.-H. Chen; M.-H. Liao; K.-R. Lee; W.-S. Hong; K.-S. Liao; M.-C. Hung; W.-S. Wang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:04Z An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures M.-H. Liao; L. C. Chang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:04Z An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures M. H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:03Z Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:02Z Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:02Z Nano-textured photonic crystal light-emitting diodes and solar cells M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:02Z Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics S.-C. Chen; S.-Y. Huang; S. Sakalley; A. Paliwal; Y.-H. Chen; M.-H. Liao; H. Sun; S. Biring; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:01Z SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:01Z Strain Engineering of Nanoscale Strained Si MOS Devices B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:00Z The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:00Z Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern M.-H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:00Z The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:59Z The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:59Z The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:58Z Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization M. H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:58Z Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:58Z The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETs M.-H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:58Z A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance M.-H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:57Z Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:57Z Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization M.-H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:56Z strained Pt Schottky diodes on n-type Si and Ge M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO
臺大學術典藏 2019-03-11T08:02:20Z The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICs C.-X. Hong;C.-H. Chen;G.-H. Liu;M.-Y. Yu;M. H.Liao; M. H.Liao; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong
臺大學術典藏 2019-03-11T08:02:20Z The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee
臺大學術典藏 2019-03-11T08:02:20Z Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices M.-H. Lee;C. Lien;C.-Y. Liu;F.-A. Tsai;K.-C. Huang;M. H.Liao; M. H.Liao; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. Lee
臺大學術典藏 2019-03-11T08:02:19Z The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate C. P. Hsieh;S.-C. Huangn;M. H.Liao; M. H.Liao; S.-C. Huangn; C. P. Hsieh
臺大學術典藏 2019-03-11T08:02:19Z The investigation of the diameter dimension effect on the Si nano-tube transistors C.-P. Wang;C.-C. Lee;C.-H. Yeh;M. H.Liao; M. H.Liao; C.-H. Yeh; C.-C. Lee; C.-P. Wang
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor S.-C. Huang;M. H.Liao; M. H.Liao; S.-C. Huang
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the novel nanotube Si device with the promising device performance behavior C. P. Hsieh;M. H.Liao; M. H.Liao; C. P. Hsieh
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the Si nano-tube device with the promising short channel control P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:18Z The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:18Z The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel. C.-C. Lee;H.-W. Hsuh;M. H.Liao; M. H.Liao; H.-W. Hsuh; C.-C. Lee
臺大學術典藏 2019-03-11T08:02:17Z The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) C.-X. Hong;C.-H. Chen;M.-Y. Yu;G.-H. Liu;M. H.Liao; M. H.Liao; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong
臺大學術典藏 2019-03-11T08:02:17Z The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:16Z The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design S.-C. Huang;M. H.Liao; M. H.Liao; S.-C. Huang
臺大學術典藏 2019-03-11T08:02:15Z The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulators C. Lien;M. H.Liao; M. H.Liao; C. Lien
臺大學術典藏 2019-03-11T08:02:15Z The demonstration of a D-SMT stressor on Ge planer n-MOSFETs P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:14Z Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions S.-M. Song; P.-C. Ling; S.-C. Chenh; H. Sun; M. H.Liao; S.-M. Song;P.-C. Ling;S.-C. Chenh;H. Sun;M. H.Liao
臺大學術典藏 2019-03-11T08:02:13Z Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee; M. H. Lee;S. T. Chang;K.-S.Li;Y.-J. Lee;P.-G. Chen;C. Lo;H.-Y. Chen;G.-Y. Siang;S.-Y.Chen;Z.-Y. Wang;Y.-C. Chou;S.-S. Gu;R.-C. Hong;C.-Y. Liao;K.-T. Chen;M. H.Liao; M. H.Liao; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu
臺大學術典藏 2019-03-11T08:02:12Z STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C. C. Lee;M. H.Liao; M. H.Liao; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
臺大學術典藏 2019-03-11T08:02:12Z STI stress modulation with additional implantati on and natural pad sin mask M.S.Liang;L.-Y.Yeh;T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee; L.-Y.Yeh; M.S.Liang
臺大學術典藏 2019-03-11T08:02:12Z Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study M. H.Liao; M. H.Liao
臺大學術典藏 2019-03-11T08:02:11Z SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION M. H.Liao; M. H.Liao
臺大學術典藏 2019-03-11T08:02:10Z Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF M.-C. Chen;K.-S. Li;M. Tang;S.-J. Huang;J.-W. Lee;S.-N. Liu;M.-J. Xie;C.-C. Cheng;K-Y. Chu;C. Liu;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen
臺大學術典藏 2019-03-11T08:02:10Z Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design M.-C.Huang;G.-H. Liu;M.-Y. Yu;S. C. Kao;L.-C. Chang;C. H. Chen;M. H.Liao; M.-C.Huang; G.-H. Liu; M.-Y. Yu; S. C. Kao; L.-C. Chang; C. H. Chen; M. H.Liao
臺大學術典藏 2019-03-11T08:02:09Z Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors Ching-Ray Chang;Meng-Huang Lai;Jong-Ching Wu;Jen-Hwa Hsu;Jen-Tzong Jeng;Chih-Cheng Lu;Yu-Hsin Su;Van Su Luong;M. H.Liao; M. H.Liao; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang
臺大學術典藏 2019-03-11T08:02:07Z MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same M.Hongh;M.H.Liao; M.H.Liao; M.Hongh
臺大學術典藏 2019-03-11T08:02:07Z Narrow channel width effect modificati on in a shallow trench isolation device T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee
臺大學術典藏 2019-03-11T08:02:07Z Nonlinear analytic model for the strain field induced by thermal copper filled TSVs J.-H. Liang;K.-C. Chen;J.-J. Lee;C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang

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