臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
臺大學術典藏	2021-12-30T03:02:01Z	Strain Engineering of Nanoscale Strained Si MOS Devices	B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:02:00Z	The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors	C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:02:00Z	Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern	M.-H. Liao; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:02:00Z	The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design	M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:59Z	The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs	M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:59Z	The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages	M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:58Z	Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization	M. H. Liao; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:58Z	Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes	M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:58Z	The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETs	M.-H. Liao; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:58Z	A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance	M.-H. Liao; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:57Z	Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis	M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:57Z	Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization	M.-H. Liao; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:56Z	strained Pt Schottky diodes on n-type Si and Ge	M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO
臺大學術典藏	2019-03-11T08:02:20Z	The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICs	C.-X. Hong;C.-H. Chen;G.-H. Liu;M.-Y. Yu;M. H.Liao; M. H.Liao; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong
臺大學術典藏	2019-03-11T08:02:20Z	The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling	C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee
臺大學術典藏	2019-03-11T08:02:20Z	Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices	M.-H. Lee;C. Lien;C.-Y. Liu;F.-A. Tsai;K.-C. Huang;M. H.Liao; M. H.Liao; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. Lee
臺大學術典藏	2019-03-11T08:02:19Z	The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate	C. P. Hsieh;S.-C. Huangn;M. H.Liao; M. H.Liao; S.-C. Huangn; C. P. Hsieh
臺大學術典藏	2019-03-11T08:02:19Z	The investigation of the diameter dimension effect on the Si nano-tube transistors	C.-P. Wang;C.-C. Lee;C.-H. Yeh;M. H.Liao; M. H.Liao; C.-H. Yeh; C.-C. Lee; C.-P. Wang
臺大學術典藏	2019-03-11T08:02:18Z	The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor	S.-C. Huang;M. H.Liao; M. H.Liao; S.-C. Huang
臺大學術典藏	2019-03-11T08:02:18Z	The demonstration of the novel nanotube Si device with the promising device performance behavior	C. P. Hsieh;M. H.Liao; M. H.Liao; C. P. Hsieh
臺大學術典藏	2019-03-11T08:02:18Z	The demonstration of the Si nano-tube device with the promising short channel control	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:18Z	The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:18Z	The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.	C.-C. Lee;H.-W. Hsuh;M. H.Liao; M. H.Liao; H.-W. Hsuh; C.-C. Lee
臺大學術典藏	2019-03-11T08:02:17Z	The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)	C.-X. Hong;C.-H. Chen;M.-Y. Yu;G.-H. Liu;M. H.Liao; M. H.Liao; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong
臺大學術典藏	2019-03-11T08:02:17Z	The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen

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