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機構 日期 題名 作者
臺大學術典藏 2021-12-30T03:01:59Z The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:58Z Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization M. H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:58Z Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:58Z The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETs M.-H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:58Z A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance M.-H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:57Z Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:57Z Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization M.-H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:01:56Z strained Pt Schottky diodes on n-type Si and Ge M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO
臺大學術典藏 2019-03-11T08:02:20Z The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICs C.-X. Hong;C.-H. Chen;G.-H. Liu;M.-Y. Yu;M. H.Liao; M. H.Liao; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong
臺大學術典藏 2019-03-11T08:02:20Z The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee
臺大學術典藏 2019-03-11T08:02:20Z Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices M.-H. Lee;C. Lien;C.-Y. Liu;F.-A. Tsai;K.-C. Huang;M. H.Liao; M. H.Liao; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. Lee
臺大學術典藏 2019-03-11T08:02:19Z The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate C. P. Hsieh;S.-C. Huangn;M. H.Liao; M. H.Liao; S.-C. Huangn; C. P. Hsieh
臺大學術典藏 2019-03-11T08:02:19Z The investigation of the diameter dimension effect on the Si nano-tube transistors C.-P. Wang;C.-C. Lee;C.-H. Yeh;M. H.Liao; M. H.Liao; C.-H. Yeh; C.-C. Lee; C.-P. Wang
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor S.-C. Huang;M. H.Liao; M. H.Liao; S.-C. Huang
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the novel nanotube Si device with the promising device performance behavior C. P. Hsieh;M. H.Liao; M. H.Liao; C. P. Hsieh
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the Si nano-tube device with the promising short channel control P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:18Z The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:18Z The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel. C.-C. Lee;H.-W. Hsuh;M. H.Liao; M. H.Liao; H.-W. Hsuh; C.-C. Lee
臺大學術典藏 2019-03-11T08:02:17Z The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) C.-X. Hong;C.-H. Chen;M.-Y. Yu;G.-H. Liu;M. H.Liao; M. H.Liao; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong
臺大學術典藏 2019-03-11T08:02:17Z The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:16Z The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design S.-C. Huang;M. H.Liao; M. H.Liao; S.-C. Huang
臺大學術典藏 2019-03-11T08:02:15Z The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulators C. Lien;M. H.Liao; M. H.Liao; C. Lien
臺大學術典藏 2019-03-11T08:02:15Z The demonstration of a D-SMT stressor on Ge planer n-MOSFETs P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:14Z Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions S.-M. Song; P.-C. Ling; S.-C. Chenh; H. Sun; M. H.Liao; S.-M. Song;P.-C. Ling;S.-C. Chenh;H. Sun;M. H.Liao
臺大學術典藏 2019-03-11T08:02:13Z Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee; M. H. Lee;S. T. Chang;K.-S.Li;Y.-J. Lee;P.-G. Chen;C. Lo;H.-Y. Chen;G.-Y. Siang;S.-Y.Chen;Z.-Y. Wang;Y.-C. Chou;S.-S. Gu;R.-C. Hong;C.-Y. Liao;K.-T. Chen;M. H.Liao; M. H.Liao; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu
臺大學術典藏 2019-03-11T08:02:12Z STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C. C. Lee;M. H.Liao; M. H.Liao; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
臺大學術典藏 2019-03-11T08:02:12Z STI stress modulation with additional implantati on and natural pad sin mask M.S.Liang;L.-Y.Yeh;T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee; L.-Y.Yeh; M.S.Liang
臺大學術典藏 2019-03-11T08:02:12Z Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study M. H.Liao; M. H.Liao
臺大學術典藏 2019-03-11T08:02:11Z SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION M. H.Liao; M. H.Liao
臺大學術典藏 2019-03-11T08:02:10Z Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF M.-C. Chen;K.-S. Li;M. Tang;S.-J. Huang;J.-W. Lee;S.-N. Liu;M.-J. Xie;C.-C. Cheng;K-Y. Chu;C. Liu;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen
臺大學術典藏 2019-03-11T08:02:10Z Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design M.-C.Huang;G.-H. Liu;M.-Y. Yu;S. C. Kao;L.-C. Chang;C. H. Chen;M. H.Liao; M.-C.Huang; G.-H. Liu; M.-Y. Yu; S. C. Kao; L.-C. Chang; C. H. Chen; M. H.Liao
臺大學術典藏 2019-03-11T08:02:09Z Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors Ching-Ray Chang;Meng-Huang Lai;Jong-Ching Wu;Jen-Hwa Hsu;Jen-Tzong Jeng;Chih-Cheng Lu;Yu-Hsin Su;Van Su Luong;M. H.Liao; M. H.Liao; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang
臺大學術典藏 2019-03-11T08:02:07Z MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same M.Hongh;M.H.Liao; M.H.Liao; M.Hongh
臺大學術典藏 2019-03-11T08:02:07Z Narrow channel width effect modificati on in a shallow trench isolation device T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee
臺大學術典藏 2019-03-11T08:02:07Z Nonlinear analytic model for the strain field induced by thermal copper filled TSVs J.-H. Liang;K.-C. Chen;J.-J. Lee;C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang
臺大學術典藏 2019-03-11T08:02:07Z Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures C.-C. Chuang;H.-I. Huang;M. H.Liao; M. H.Liao; H.-I. Huang; C.-C. Chuang
臺大學術典藏 2019-03-11T08:02:06Z Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors J.-M. Hwang;M.-T. Wang;M.-H. Lee;Y.-C. Yao;Y.-A. Hsieh;P.-G. Chen;Z.-P. Yang;Y.-J. Lee;M. H.Liao; M. H.Liao; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang
臺大學術典藏 2019-03-11T08:02:05Z Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen
臺大學術典藏 2019-03-11T08:02:05Z In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics P.-G. Chen; M. Tang; M. H. Lee; M. H. Lee;M. Tang;P.-G. Chen;M. H.Liao; M. H.Liao
臺大學術典藏 2019-03-11T08:02:05Z Isolation Region Implant and Structure T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee
臺大學術典藏 2019-03-11T08:02:05Z MAGNET IC CAPACIT OR STRUCT URES C.Chen;C.Hsieh;M.H.Liao; M.H.Liao; C.Hsieh; C.Chen
臺大學術典藏 2019-03-11T08:02:04Z Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships M. H.Liao; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng; S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C.-C. Lee;M. H.Liao
臺大學術典藏 2019-03-11T08:02:03Z Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:02Z CVD chamber design to improve deposition quality in both 300- and 450- mm wafers with 3D-chamber modeling and experimental visual technique M.-C. Huang;S.-C. Kao;C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen; S.-C. Kao; M.-C. Huang
臺大學術典藏 2019-03-11T08:02:02Z Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments Miin-Jang Chen;Min-Hung Lee;Hsin-ChihLin;Chin-Lung Kuo;Jhih-Jie Huang;Ming-Lun Chang;Li-Tien Huang;M. H.Liao; M. H.Liao; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen
臺大學術典藏 2019-03-11T08:02:01Z A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation H. C.Cheng;S. M. Jang;T. L. Lee;L. T. Wang;T. C. Huang;M. H. Yu;M. H.Liao; M. H.Liao; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng
臺大學術典藏 2019-03-11T08:01:19Z ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process C. P. Hsieh;P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen; C. P. Hsieh
臺大學術典藏 2019-03-11T08:01:14Z Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis Chenming Hu;Sayeef Salahuddin;F. L. Yang;W. K. Yeh;J. M. Sheih;M. C. Chen;M. H. Lee;C. C. Chen;C.-C. Cheng;C. H. Lin;T. Y. Lai;P.-G. Chen;K. S. Li;M. H.Liao; M. H.Liao; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming Hu
臺大學術典藏 2019-03-11T08:01:10Z The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
義守大學 2017-11 The Epidemiology and Characteristics of Q fever and Co-infections with Scrub Typhus, Murine Typhus or Leptospirosis in Taiwan: A Nationwide Database Study C.-H. Lai;W. Sun;C.-H. Lee;J.-N. Lin;M.-H. Liao;S.-S. Liu;T.-Y. Chang;K.-F. Tsai;Y.-C. Chang;H.-H. Lin;Y.-H. Chen

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