臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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機構	日期	題名	作者
臺大學術典藏	2021-12-30T03:01:57Z	Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis	M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:57Z	Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization	M.-H. Liao; MING-HAN LIAO
臺大學術典藏	2021-12-30T03:01:56Z	strained Pt Schottky diodes on n-type Si and Ge	M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO
臺大學術典藏	2019-03-11T08:02:20Z	The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICs	C.-X. Hong;C.-H. Chen;G.-H. Liu;M.-Y. Yu;M. H.Liao; M. H.Liao; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong
臺大學術典藏	2019-03-11T08:02:20Z	The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling	C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee
臺大學術典藏	2019-03-11T08:02:20Z	Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices	M.-H. Lee;C. Lien;C.-Y. Liu;F.-A. Tsai;K.-C. Huang;M. H.Liao; M. H.Liao; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. Lee
臺大學術典藏	2019-03-11T08:02:19Z	The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate	C. P. Hsieh;S.-C. Huangn;M. H.Liao; M. H.Liao; S.-C. Huangn; C. P. Hsieh
臺大學術典藏	2019-03-11T08:02:19Z	The investigation of the diameter dimension effect on the Si nano-tube transistors	C.-P. Wang;C.-C. Lee;C.-H. Yeh;M. H.Liao; M. H.Liao; C.-H. Yeh; C.-C. Lee; C.-P. Wang
臺大學術典藏	2019-03-11T08:02:18Z	The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor	S.-C. Huang;M. H.Liao; M. H.Liao; S.-C. Huang
臺大學術典藏	2019-03-11T08:02:18Z	The demonstration of the novel nanotube Si device with the promising device performance behavior	C. P. Hsieh;M. H.Liao; M. H.Liao; C. P. Hsieh
臺大學術典藏	2019-03-11T08:02:18Z	The demonstration of the Si nano-tube device with the promising short channel control	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:18Z	The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:18Z	The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.	C.-C. Lee;H.-W. Hsuh;M. H.Liao; M. H.Liao; H.-W. Hsuh; C.-C. Lee
臺大學術典藏	2019-03-11T08:02:17Z	The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)	C.-X. Hong;C.-H. Chen;M.-Y. Yu;G.-H. Liu;M. H.Liao; M. H.Liao; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong
臺大學術典藏	2019-03-11T08:02:17Z	The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:16Z	The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design	S.-C. Huang;M. H.Liao; M. H.Liao; S.-C. Huang
臺大學術典藏	2019-03-11T08:02:15Z	The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulators	C. Lien;M. H.Liao; M. H.Liao; C. Lien
臺大學術典藏	2019-03-11T08:02:15Z	The demonstration of a D-SMT stressor on Ge planer n-MOSFETs	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:14Z	Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions	S.-M. Song; P.-C. Ling; S.-C. Chenh; H. Sun; M. H.Liao; S.-M. Song;P.-C. Ling;S.-C. Chenh;H. Sun;M. H.Liao
臺大學術典藏	2019-03-11T08:02:13Z	Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles	Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee; M. H. Lee;S. T. Chang;K.-S.Li;Y.-J. Lee;P.-G. Chen;C. Lo;H.-Y. Chen;G.-Y. Siang;S.-Y.Chen;Z.-Y. Wang;Y.-C. Chou;S.-S. Gu;R.-C. Hong;C.-Y. Liao;K.-T. Chen;M. H.Liao; M. H.Liao; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu
臺大學術典藏	2019-03-11T08:02:12Z	STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors	S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C. C. Lee;M. H.Liao; M. H.Liao; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
臺大學術典藏	2019-03-11T08:02:12Z	STI stress modulation with additional implantati on and natural pad sin mask	M.S.Liang;L.-Y.Yeh;T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee; L.-Y.Yeh; M.S.Liang
臺大學術典藏	2019-03-11T08:02:12Z	Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study	M. H.Liao; M. H.Liao
臺大學術典藏	2019-03-11T08:02:11Z	SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION	M. H.Liao; M. H.Liao
臺大學術典藏	2019-03-11T08:02:10Z	Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF	M.-C. Chen;K.-S. Li;M. Tang;S.-J. Huang;J.-W. Lee;S.-N. Liu;M.-J. Xie;C.-C. Cheng;K-Y. Chu;C. Liu;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen

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