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機構	日期	題名	作者
臺大學術典藏	2019-03-11T08:02:12Z	STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors	S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C. C. Lee;M. H.Liao; M. H.Liao; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
臺大學術典藏	2019-03-11T08:02:12Z	STI stress modulation with additional implantati on and natural pad sin mask	M.S.Liang;L.-Y.Yeh;T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee; L.-Y.Yeh; M.S.Liang
臺大學術典藏	2019-03-11T08:02:12Z	Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study	M. H.Liao; M. H.Liao
臺大學術典藏	2019-03-11T08:02:11Z	SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION	M. H.Liao; M. H.Liao
臺大學術典藏	2019-03-11T08:02:10Z	Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF	M.-C. Chen;K.-S. Li;M. Tang;S.-J. Huang;J.-W. Lee;S.-N. Liu;M.-J. Xie;C.-C. Cheng;K-Y. Chu;C. Liu;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen
臺大學術典藏	2019-03-11T08:02:10Z	Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design	M.-C.Huang;G.-H. Liu;M.-Y. Yu;S. C. Kao;L.-C. Chang;C. H. Chen;M. H.Liao; M.-C.Huang; G.-H. Liu; M.-Y. Yu; S. C. Kao; L.-C. Chang; C. H. Chen; M. H.Liao
臺大學術典藏	2019-03-11T08:02:09Z	Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors	Ching-Ray Chang;Meng-Huang Lai;Jong-Ching Wu;Jen-Hwa Hsu;Jen-Tzong Jeng;Chih-Cheng Lu;Yu-Hsin Su;Van Su Luong;M. H.Liao; M. H.Liao; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang
臺大學術典藏	2019-03-11T08:02:07Z	MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same	M.Hongh;M.H.Liao; M.H.Liao; M.Hongh
臺大學術典藏	2019-03-11T08:02:07Z	Narrow channel width effect modificati on in a shallow trench isolation device	T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee
臺大學術典藏	2019-03-11T08:02:07Z	Nonlinear analytic model for the strain field induced by thermal copper filled TSVs	J.-H. Liang;K.-C. Chen;J.-J. Lee;C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang
臺大學術典藏	2019-03-11T08:02:07Z	Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures	C.-C. Chuang;H.-I. Huang;M. H.Liao; M. H.Liao; H.-I. Huang; C.-C. Chuang
臺大學術典藏	2019-03-11T08:02:06Z	Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors	J.-M. Hwang;M.-T. Wang;M.-H. Lee;Y.-C. Yao;Y.-A. Hsieh;P.-G. Chen;Z.-P. Yang;Y.-J. Lee;M. H.Liao; M. H.Liao; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang
臺大學術典藏	2019-03-11T08:02:05Z	Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy	C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen
臺大學術典藏	2019-03-11T08:02:05Z	In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics	P.-G. Chen; M. Tang; M. H. Lee; M. H. Lee;M. Tang;P.-G. Chen;M. H.Liao; M. H.Liao
臺大學術典藏	2019-03-11T08:02:05Z	Isolation Region Implant and Structure	T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee
臺大學術典藏	2019-03-11T08:02:05Z	MAGNET IC CAPACIT OR STRUCT URES	C.Chen;C.Hsieh;M.H.Liao; M.H.Liao; C.Hsieh; C.Chen
臺大學術典藏	2019-03-11T08:02:04Z	Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships	M. H.Liao; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng; S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C.-C. Lee;M. H.Liao
臺大學術典藏	2019-03-11T08:02:03Z	Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:02Z	CVD chamber design to improve deposition quality in both 300- and 450- mm wafers with 3D-chamber modeling and experimental visual technique	M.-C. Huang;S.-C. Kao;C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen; S.-C. Kao; M.-C. Huang
臺大學術典藏	2019-03-11T08:02:02Z	Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments	Miin-Jang Chen;Min-Hung Lee;Hsin-ChihLin;Chin-Lung Kuo;Jhih-Jie Huang;Ming-Lun Chang;Li-Tien Huang;M. H.Liao; M. H.Liao; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen
臺大學術典藏	2019-03-11T08:02:01Z	A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation	H. C.Cheng;S. M. Jang;T. L. Lee;L. T. Wang;T. C. Huang;M. H. Yu;M. H.Liao; M. H.Liao; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng
臺大學術典藏	2019-03-11T08:01:19Z	~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process	C. P. Hsieh;P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen; C. P. Hsieh
臺大學術典藏	2019-03-11T08:01:14Z	Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis	Chenming Hu;Sayeef Salahuddin;F. L. Yang;W. K. Yeh;J. M. Sheih;M. C. Chen;M. H. Lee;C. C. Chen;C.-C. Cheng;C. H. Lin;T. Y. Lai;P.-G. Chen;K. S. Li;M. H.Liao; M. H.Liao; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming Hu
臺大學術典藏	2019-03-11T08:01:10Z	The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
義守大學	2017-11	The Epidemiology and Characteristics of Q fever and Co-infections with Scrub Typhus, Murine Typhus or Leptospirosis in Taiwan: A Nationwide Database Study	C.-H. Lai;W. Sun;C.-H. Lee;J.-N. Lin;M.-H. Liao;S.-S. Liu;T.-Y. Chang;K.-F. Tsai;Y.-C. Chang;H.-H. Lin;Y.-H. Chen

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