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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
臺大學術典藏 2019-03-11T08:02:07Z Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures C.-C. Chuang;H.-I. Huang;M. H.Liao; M. H.Liao; H.-I. Huang; C.-C. Chuang
臺大學術典藏 2019-03-11T08:02:06Z Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors J.-M. Hwang;M.-T. Wang;M.-H. Lee;Y.-C. Yao;Y.-A. Hsieh;P.-G. Chen;Z.-P. Yang;Y.-J. Lee;M. H.Liao; M. H.Liao; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang
臺大學術典藏 2019-03-11T08:02:05Z Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen
臺大學術典藏 2019-03-11T08:02:05Z In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics P.-G. Chen; M. Tang; M. H. Lee; M. H. Lee;M. Tang;P.-G. Chen;M. H.Liao; M. H.Liao
臺大學術典藏 2019-03-11T08:02:05Z Isolation Region Implant and Structure T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee
臺大學術典藏 2019-03-11T08:02:05Z MAGNET IC CAPACIT OR STRUCT URES C.Chen;C.Hsieh;M.H.Liao; M.H.Liao; C.Hsieh; C.Chen
臺大學術典藏 2019-03-11T08:02:04Z Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships M. H.Liao; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng; S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C.-C. Lee;M. H.Liao
臺大學術典藏 2019-03-11T08:02:03Z Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:02Z CVD chamber design to improve deposition quality in both 300- and 450- mm wafers with 3D-chamber modeling and experimental visual technique M.-C. Huang;S.-C. Kao;C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen; S.-C. Kao; M.-C. Huang
臺大學術典藏 2019-03-11T08:02:02Z Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments Miin-Jang Chen;Min-Hung Lee;Hsin-ChihLin;Chin-Lung Kuo;Jhih-Jie Huang;Ming-Lun Chang;Li-Tien Huang;M. H.Liao; M. H.Liao; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen

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