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Institution Date Title Author
國立臺灣海洋大學 2016-05 Demonstration of large field effect in topological insulator films via a high-k back gate J. Kwo; C. Y. Wang; H. Y. Lin; S. R. Yang; K. H. M. Chen; Y. H. Lin; K. H. Chen; L. B. Young; C. K. Cheng; S. C. Tseng; Y. T. Fanchiang; M. Hong
國立臺灣海洋大學 2015-09 Epitaxial ferromagnetic Fe 3 Si on GaAs(111)A with atomically smooth surface and interface M. Hong; Y. C. Liu; Y. W. Chen; S. C. Tseng; M. T. Chang; S. C. Lo; Y. H. Lin; K. Cheng; H. Y. Hung; C. H. Hsu; J. Kwo
國立中山大學 2008 Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters Y.C. Chang;M.L. Huang;K.Y. Lee;Y.J. Lee;T.D. Lin;M. Hong;J. Kwo;T.S. Lay;C.C. Liao;K.Y. Cheng
國立中山大學 2006 Structural and electrical characteristics of Ga2O3(Gd2O3)/GaAs under high temperature annealing C.P. Chen;Y.J. Lee;Y.C. Chang;Z.K. Yang;M. Hong;J. Kwo;H.Y. Lee;T.S. Lay
國立東華大學 2005 Thin single-crystal Sc2O3 films epitaxially grown on Si (111)— structure and electrical properties 祁錦雲; Jim-Yong Chi; C.P. Chen; M. Hong; J. Kwo; H.M. Cheng; Y.L. Huang; S.Y. Lin; J. Chi; H.Y. Lee; Y.F. Hsieh ;J.P. Mannaerts
國立東華大學 2005 Depletion-mode InGaAs/GaAs MOSFET with oxide passivated by amorphous Si 祁錦雲; Jim-Yong Chi; P. J. Tsai; U.N.Chiu;L. K. Chu; Y. W. Chen; H. P. Yang; P. Chang; J. Kwo; J. Chi; M. Hong
國立中山大學 2005 Depth-profile study of the electronic structures at Ga2O3(Gd2O3)- and Gd2O3-GaN interfaces by x-ray photoelectron spectroscopy T.S. Lay;Y.Y. Liao;W.H. Hung;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學 2005 Depth-profiling the electronic structures at HfO2/Si interfaces grown by molecular beam epitaxy T.S. Lay;S.C. Chang;G.J. Din;C.C. Yeh;W.H. Hung;W.G. Lee;J. Kwo;M. Hong
國立中山大學 2003 Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor T.S. Lay;Y.Y. Liao;W.D. Liu;Y.H. Lai;W.H. Hung;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學 2002 Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallization annealing T.S. Lay;W.D. Liu;J. Kwo;M. Hong;J.P. Mannaerts

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