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Institution	Date	Title	Author
元智大學	2010	Highly efficient flexible inverted organic solar cell using atomic layer deposited ZnO as electron selective layer	彭宗平; J.-C. Wang; W.-T. Weng; M.-Y. Tsai; M.-K. Lee; S.-F. Horng; C.-C. Kei; C.-C. Yu; H.-F. Meng
國立中山大學	2007-05	Photocatalyses of Nano-scaled ZnSe/TiO2 and ZnS/TiO2 Heterojunctions	M.K. Lee;T.H. Shih;C.L. Ho;H.C. Lee;C.F. Yen;H.F. Tu;C.H. Fan
國立中山大學	2007-05	Electrical characteristics of fluorine passivated MOCVD-TiO2 film on (NH4)2Sx treated GaAs	M.K. Lee;C.F. Yen;T.H. Shih;C.L. Ho;H.C. Lee;H.F. Tu;C.H. Fan
國立中山大學	2006-12	Enhancement-mode MOSFETs with TiO2 as gate oxides prepared by MOCVD on Si and LPD on InP treated with (NH4)2Sx	M.K. Lee;C.F. Yen;S.H. Lin
國立中山大學	2005	Enhancement of Deposition Rate of Titanium Silicon Oxide Films on Silicon Using Hexafluorotitanic Acid by Nitric Acid	M.K. Lee; K.W. Tung; C.M. Yu
國立中山大學	2005	Characterization of Thermal Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition	M.K. Lee; C.M. Shih; S.M. Chang; H.C. Wang; J.J. Hung
國立中山大學	2004	Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition	M.K. Lee; C.M. Shih; S.Y. Lin; C.D. Yang; T.H. Shih
國立中山大學	2003-11	The electrical properties of liquid phase deposited SiOF films by thermal annealing treatment	M.K. Lee;C.M. Shih;S.M. Chang;H.C. Wang
國立中山大學	2003-05	Characteristics of zinc selenium self-assembled quantum dots prepared metalorganic vapor-phase epitaxy	M.K. Lee;C.C. Lan;T.H. Shih
國立中山大學	2003-05	Photoluminescence of Anatase Titanium Oxide Film Grown by Liquid Phase Deposition with N2 Annealing	M.K. Lee;C.M. Shih
國立中山大學	2003-05	Photoluminescence of Anatase Titanium Oxide Film Grown by Liquid Phase Deposition with N2 Annealing	M.K. Lee;C.M. Shih
國立中山大學	2003-01	The eletrical properties of liquid phase deposition SiOF films by thermal annealing treatment	M.K. Lee;C.M. Shih;S.M. Chang;H.C. Wang
國立中山大學	2003	High Quality Fluorinated Silicon Dioxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition with Ammonium Hydroxide Incorporation	M.K. Lee; W.H. Shieh; C.M. Shih; S.Y. Lin; K.W. Tung
國立中山大學	2003	High Quality Nitrogen Doped Fluorinated Silicon Oxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition	M.K. Lee; W.H. Shieh; C.M. Shih; K.W. Tung
國立中山大學	2003	Heteroepitaxial Growth of ZnSxSe1-x on GaAs0.6P0.4/GaAs by Metalorganic Vapor Phase Epitaxy	M.K. Lee; T.H. Shih; H.F. Huang; S.J. Wei; C.M. Shih
國立中山大學	2002-12	Nitrogen Incorporated SiOF Film by Temperature-Difference Based Liquid-Phase Deposition	M.K. Lee;C.M. Shih;W.H. Shieh;K.W. Tung
國立中山大學	2002-11	ZnSe Quantum Dots Formation on GaAs Substrate Prepared by MOVPE	M.K. Lee;C.C. Lan;T.H. Shih;Y.Y. Chen
國立中山大學	2002-11	The Pre-Baking Treatment of Sapphire Substrate on the Quality of MOCVD-GaN	M.K. Lee;C.L. Ho;Y.L. Lin;C.H. Huang
國立中山大學	2002	Deposition of Barium Titanate Films on Silicon by Barium Fluotitanate Powder	M.K. Lee; K.W. Tung; C.C. Cheng; H.C. Liao; C.M. Shih
國立中山大學	2002	Lift-off and re-growth of ZnSSe epilayer	M.K. Lee; B.T. Tsay; T.H. Shih
國立中山大學	2002	Characteristics and growth mechanism of TixSi1-xOy films by liquid phase deposition	M.K. Lee; C.M. Shih; W.H. Shieh
國立中山大學	2002	Properties of TiO2 thin films on InP substrate prepared by liquid phase deposition	M.K. Lee; J.J. Huang; C.M. Shih; C.C. Cheng
國立中山大學	2001-11	Fluorinated Silicon Dioxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition with Ammonia Hydroxide Aqua Incorporation	M.K. Lee;W.H. Shieh;C.M. Shih;S.Y. Lin
國立中山大學	2001-11	Properties of TiO2 thin films on InP substrate prepared by liquid phase deposition	M.K. Lee;J.J. Huang;C.M. Shih;C.C. Cheng
國立中山大學	2001-11	Liquid Phase Deposition of BaTiO3 Thin Film on Silicon Using Hexafluorotitanic Acid and Control Film Thickness by Deposition Temperature	M.K. Lee;K.W. Tung;C.C. Cheng

Showing items 1-25 of 158 (7 Page(s) Totally)
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