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Showing items 121-130 of 158  (16 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1989 Material Properties of InP-on-Si Grown by Low-Pressure Organometallic Vapor Phase Epitaxy D.S. Wuu; H.H. Tung; R.H. Horng; M.K. Lee
國立中山大學 1989 Strain Variations in Heteroepitaxial InP-on-Si Grown by Low-Pressure Metalorganic Chemical Vapor Deposition D.S. Wuu; R.H. Horng; M.K. Lee
國立中山大學 1989 ZnSe/Si Hybrid Material System Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee;M.Y. Yeh;C.C. Chang
國立中山大學 1989 Compound Semiconductors on Silicon Technology M.K. Lee
國立中山大學 1988 Heteroepitaxial Growth of Ga(0.51)In(0.49)P/GaAs Epilayers on Si Substrates bv Low-Pressure Organometallic Chemical Vapor Deposition R.H. Horng; D.S. We; M.K. Lee
國立中山大學 1988 Growth and Characterization of InP/GaAs Epilayers on Si Substrates by Low-pressure Metalorganic Chemical Vapor Phase Epitaxy M.K. Lee; D.S. Wuu; H.H. Jung; K.Y. Yu; K.C. Huang
國立中山大學 1988 Heteroepitaxial Growth of ZnSe on (111)Si by Low-pressure Metalorganic Chemical Vapor Deposition M.K. Lee; J.H. Chang; M.Y. Yeh; Y.F. Lin
國立中山大學 1988 Growth and Characterization of InP Epilayers on ZnSe-coated Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee; D.S. Wuu; H.H. Tung; J.H. Chang; Y.F. Lin
國立中山大學 1988 Isoelectronic Doping in GaAs Epilayers Grown by Molecular Beam Epitaxy M.K. Lee; T.H. Chiu; A. Dayem; E. Agyekum
國立中山大學 1988 Heteroepitaxial Growth of Indium Phosphide on Silicon by MOCVD Using Adduct Source M.K. Lee; D.S. We; H.H. Tung

Showing items 121-130 of 158  (16 Page(s) Totally)
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