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"m k lee"

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Showing items 131-158 of 158 (4 Page(s) Totally)
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Institution	Date	Title	Author
國立中山大學	1988	Characterization of InP/GaAs Epilayers Grown on Si Substrates by Low-Pressure Organometallic Chemical Vapor Phase Epitaxy	M.K. Lee; D.S. Wuu; H.H. Tung; K.Y. Yu; K.C. Huang
國立中山大學	1988	MOCVD Growth of InP on Si by Using a GaAs Buffer Layer	M.K. Lee;D.S. Wuu;H.H. Tung;K.Y. Yu;K.C. Huang
國立中山大學	1988	Heteroepitaxial Grown of ZnSe on GaAs/Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee;J.H. Chang;M.Y. Yeh;Y.F. Lin;K.C. Huang
國立中山大學	1988	Heteroepitaxial Growth of ZnSe on (111)Si by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee;J.H. Chang;M.Y. Yeh;K.C. Huang
國立中山大學	1988	Organometallic growth and Material Properties of InP-on-Si	M.K. Lee;D.S. Wuu;H.H. Tung;R.H. Horng;K.C. Huang
國立中山大學	1987	ZnSe Thin Film Prepared by Metal-Organic Chemical Vapor Deposition	M.K. Lee
國立中山大學	1987	Low Pressure Metalorganic Vapor Phase Epitaxy of InP Using a Trimethylindium- Trimethylphosphine Adduct Source	M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學	1987	Heteroepitaxial Growth of InP on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學	1987	Gallium Arsenide Growth on Silicon From Triethylgallium and Arsine by Metalorganic Chemical Vapor Deposition	M.K. Lee;K.Y. Yu;Y.F. Lin
國立中山大學	1987	Epitaxial Growth of Indium Phosphide on GaAs by Low Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學	1987	Heteroepitaxial Growth of InP Directly on Si by Low Pressure Metalorganic Chemical Vapor Depositions	M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學	1987	Gallium Arsenide Grown on Silicon From Trimethylgallium and Arsine by Metalorganic Chemical Vapor Deposition	M.K. Lee;K.Y. Yu;Y.F. Lin;J.H. Chang;K.C. Hwang
國立中山大學	1987	Vapor Phase Epitaxy of Indium Phosphide Using Metalorganic Adduct Compound	M.K. Lee;D.S. Wu;H.H. Tung
國立中山大學	1987	InP Epitaxial Growth by Low Pressure Metalorganic Chemical Vapor Deposition Using Adduct Source	M.K. Lee;D.S. Wu;H.H. Tung
國立中山大學	1986	Tin-Doped GaAs Epilayers Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using Triethylgallium and Tetraethyltin	M.K. Lee; Y.C. Chang
國立中山大學	1986	Growth and Characterization of ZnSe Epilayers by Low Pressure MOCVD	M.K. Lee
國立中山大學	1986	Low Cost ZnSe Thin Film Prepared by Organometallic Chemical Vapor Deposition	M.K. Lee
國立中山大學	1984	Growth Mechanisms of the GaAs LPMOCVD Growth	C.Y. Chang;M.K. Lee;Y.K. Su;Y.C. Chou;L.P. Chen
國立中山大學	1983	Enhancement of Growth Rate due to Tin Doping in GaAs Epilayer Grown by Low Pressure Metalorgarlic Chemical Vapor Deposition	M.K. Lee; C.Y. Chang; Y.K. Su; W.C. Hsu
國立中山大學	1983	Control of Silicon Dioxide Properties by RF Sputtering	M.K. Lee; C.Y. Chang; I.S. Tzeng; Y.K. Su
國立中山大學	1983	Investigation of Sn-doped GaAs Epilayers Grown by Low Pressure Metal-Organic Chemical Vapor Deposition	M.K. Lee; C.Y. Chang; Y.K. Su
國立中山大學	1982-10	Sn-doped GaAs Epilayers Grown by Low Pressure MOCVD	C.Y. Chang;M.K. Lee;Y.K. Su
國立中山大學	1982	Two Region Associated with Transverse Field Characteristic Model of GaAs MESFET	M.K. Lee;C.Y. Chang;Y.K. Su
國立中山大學	1982	A Method for Growing Sn-doped Gays Epilayers by Low Pressure MOCVD	C.Y. Chang;M.K. Lee;Y.K. Su;T.S. Wu
國立中山大學	1981	Characterization of GaAs Epitaxial Layers by Low Pressure MOVPE Using TEG as Ga Source	C.Y. Chang; Y.K. Su; M.K. Lee; M.P. Houng
國立中山大學	1981	Growth and Properties of GaP/Si Device by MOCVD	Y.K. Su;C.Y. Chang;T.S. Wu;M.K. Lee;M.P. Houng;L.G. Chen
國立中山大學	1981	Properties of Sn-doped GaAs Epitaxial Layers by Low Pressure MOCVD	M.K. Lee;C.Y. Chang;Y.K. Su
國立中山大學	1979	A New Method of SiO2 Film Deposition by Sputtering	M.K. Lee;J.S. Tzeng;C.Y. Chang

Showing items 131-158 of 158 (4 Page(s) Totally)
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