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Showing items 151-158 of 158  (7 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1983 Investigation of Sn-doped GaAs Epilayers Grown by Low Pressure Metal-Organic Chemical Vapor Deposition M.K. Lee; C.Y. Chang; Y.K. Su
國立中山大學 1982-10 Sn-doped GaAs Epilayers Grown by Low Pressure MOCVD C.Y. Chang;M.K. Lee;Y.K. Su
國立中山大學 1982 Two Region Associated with Transverse Field Characteristic Model of GaAs MESFET M.K. Lee;C.Y. Chang;Y.K. Su
國立中山大學 1982 A Method for Growing Sn-doped Gays Epilayers by Low Pressure MOCVD C.Y. Chang;M.K. Lee;Y.K. Su;T.S. Wu
國立中山大學 1981 Characterization of GaAs Epitaxial Layers by Low Pressure MOVPE Using TEG as Ga Source C.Y. Chang; Y.K. Su; M.K. Lee; M.P. Houng
國立中山大學 1981 Growth and Properties of GaP/Si Device by MOCVD Y.K. Su;C.Y. Chang;T.S. Wu;M.K. Lee;M.P. Houng;L.G. Chen
國立中山大學 1981 Properties of Sn-doped GaAs Epitaxial Layers by Low Pressure MOCVD M.K. Lee;C.Y. Chang;Y.K. Su
國立中山大學 1979 A New Method of SiO2 Film Deposition by Sputtering M.K. Lee;J.S. Tzeng;C.Y. Chang

Showing items 151-158 of 158  (7 Page(s) Totally)
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