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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2018-09-10T07:08:19Z STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device H. J. Hung;J. I. Lu;J. B. Kuo;G. S. Lin;C. S. Yeh;C. T. Tsai;M. Ma; H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:19Z STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device H. J. Hung;J. I. Lu;J. B. Kuo;G. S. Lin;C. S. Yeh;C. T. Tsai;M. Ma; H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T06:35:00Z STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO; I. Lin; V. Su
臺大學術典藏 2018-09-10T06:35:00Z Influence of STI-induced mechnical stress in kink effect of 65nm PD SOI CMOS devices I. Lin; V. Su; J. Kuo; R. Lee; G. Lin; D. Chen; C. Yeh; C. Tsai; M. Ma; JAMES-B KUO

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