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臺大學術典藏 |
2022-04-21T23:17:30Z |
Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (3nm) and Thick Bodies ((30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92?A at VOV=VDS=-0.5V by CVD Epitaxy and Dry Etching
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Tsai, Chung En; Liu, Yi Chun; Tu, Chien Te; Huang, Bo Wei; Jan, Sun Rong; Chen, Yu Rui; Chen, Jyun Yan; Chueh, Shee Jier; Cheng, Chun Yi; Tsen, Chia Jung; Ma, Yichen; CHEN-WUING LIU |
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