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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T06:31:20Z	Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si	Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T05:58:49Z	Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices	Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T05:58:48Z	The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs	Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T05:23:46Z	Abnormal hole mobility of biaxial strained Si	Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T05:23:45Z	Novel schottky barrier strained germanium PMOS	Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T05:23:45Z	Mobility-enhancement technologies	Liu, C.W.; Maikap, S.; Yu, C.-Y.; Liu, Chee Wee
臺大學術典藏	2018-09-10T05:21:15Z	MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics	Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:10Z	Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan	Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:55:30Z	BICMOS devices under mechanical strain	Liu, C.W.;Maikap, S.;Liao, M.H.;Yuan, F.;Lee, M.H.; Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T04:55:29Z	Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs	Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T04:55:28Z	Package-strain-enhanced device and circuit performance	Maikap, S.;Liao, M.H.;Yuan, F.;Lee, M.H.;Huang, C.-F.;Chang, S.T.;Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T04:55:28Z	Mechanically strained Si-SiGe HBTs	Yuan, F.;Jan, S.-R.;Maikap, S.;Liu, Y.-H.;Liang, C.-S.;Liu, C.W.; Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T04:55:27Z	Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers	Tzeng, P.J.;Maikap, S.;Lai, W.Z.;Liang, C.S.;Chen, P.S.;Lee, L.S.;Liu, C.W.; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T04:33:14Z	Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs	Chen, P.S.; Hua, W.-C.; Yu, C.-Y.; Tseng, Y.T.; Maikap, S.; Hsu, Y.M.; Liu, C.W.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; Lee, M.H.; CHEE-WEE LIU et al.
國立臺灣大學	2012	Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure	Banerjee, W.; Maikap, S.; Rahaman, S.Z.; Prakash, A.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.
國立臺灣大學	2011	Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals	Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.
國立臺灣大學	2011	Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors	Maikap, S.; Banerjee, W.; Tien, T.C.; Wang, T.Y.; Yang, J.R.
國立臺灣大學	2010	Ruthenium oxide metal nanocrystal capacitors with high-kappa dielectric tunneling barriers for nanoscale nonvolatile memory device applications	Das, Atanu; Maikap, S.; Lin, C.-H.; Tzeng, P.-J.; Tien, T.-C.; Wang, T.-Y.; Chang, L.-B.; Yang, J.-R.; Tsai, M.-J.
國立臺灣大學	2007	Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications	Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J.
國立臺灣大學	2007	Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2/TiO2 multilayers	Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Tien, T. C.; Lee, L. S.; Yang, J. R.; Tsai, M.J.
國立臺灣大學	2007	Charge storage characteristics of atomic layer deposited RuOx nanocrystals	Maikap, S.; Wang, T. Y.; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Yang, J. R.; Tsai, M. J.
國立臺灣大學	2007	HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications	Maikap, S.; Tzeng, P. J.; Wang, T. Y.; Lee, H. Y.; Lin, C. H.; Wang,? C. C.; Lee, L. S.; Yang, J. R.; Tsai, M. J.
國立臺灣大學	2007	Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si	Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M. H.; Maikap, S.; Hsu, C.-H.; Liu, C. W.
國立臺灣大學	2006	Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices	Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.
國立臺灣大學	2006	Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices	Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.

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