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Showing items 1-37 of 37 (1 Page(s) Totally) 1 View [10|25|50] records per page
臺大學術典藏 |
2020-01-13T08:22:42Z |
Abnormal hole mobility of biaxial strained Si
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Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.; MING-HAN LIAO |
臺大學術典藏 |
2019-12-27T07:49:50Z |
MBE-grown high 庥 gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics
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Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
臺大學術典藏 |
2019-03-11T08:00:58Z |
Novel schottky barrier strained germanium PMOS
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Liu, C.W.;Chang, S.T.;Maikap, S.;Yu, C.-Y.;Lee, M.H.;Yuan, F.;Peng, C.-Y.;Liao, M.H.; Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W. |
臺大學術典藏 |
2019-03-11T08:00:57Z |
BICMOS devices under mechanical strain
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Lee, M.H.;Yuan, F.;Maikap, S.;Liu, C.W.;Liao, M.H.; Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H. |
臺大學術典藏 |
2019-03-11T08:00:57Z |
Package-strain-enhanced device and circuit performance
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Liu, C.W.;Chang, S.T.;Huang, C.-F.;Lee, M.H.;Yuan, F.;Maikap, S.;Liao, M.H.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W. |
臺大學術典藏 |
2018-09-10T06:31:20Z |
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
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Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; Liu, C.W.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T05:58:49Z |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T05:58:48Z |
The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs
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Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; Liu, C.W.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T05:23:46Z |
Abnormal hole mobility of biaxial strained Si
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Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T05:23:45Z |
Novel schottky barrier strained germanium PMOS
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Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T05:23:45Z |
Mobility-enhancement technologies
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Liu, C.W.; Maikap, S.; Yu, C.-Y.; Liu, Chee Wee |
臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
臺大學術典藏 |
2018-09-10T05:21:10Z |
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
臺大學術典藏 |
2018-09-10T04:55:30Z |
BICMOS devices under mechanical strain
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Liu, C.W.;Maikap, S.;Liao, M.H.;Yuan, F.;Lee, M.H.; Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T04:55:29Z |
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
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Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T04:55:28Z |
Package-strain-enhanced device and circuit performance
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Maikap, S.;Liao, M.H.;Yuan, F.;Lee, M.H.;Huang, C.-F.;Chang, S.T.;Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T04:55:28Z |
Mechanically strained Si-SiGe HBTs
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Yuan, F.;Jan, S.-R.;Maikap, S.;Liu, Y.-H.;Liang, C.-S.;Liu, C.W.; Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T04:55:27Z |
Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers
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Tzeng, P.J.;Maikap, S.;Lai, W.Z.;Liang, C.S.;Chen, P.S.;Lee, L.S.;Liu, C.W.; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU |
臺大學術典藏 |
2018-09-10T04:33:14Z |
Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs
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Chen, P.S.; Hua, W.-C.; Yu, C.-Y.; Tseng, Y.T.; Maikap, S.; Hsu, Y.M.; Liu, C.W.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; Lee, M.H.; CHEE-WEE LIU et al. |
國立臺灣大學 |
2012 |
Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure
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Banerjee, W.; Maikap, S.; Rahaman, S.Z.; Prakash, A.; Tien, T.-C.; Li, W.-C.; Yang, J.-R. |
國立臺灣大學 |
2011 |
Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals
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Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R. |
國立臺灣大學 |
2011 |
Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors
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Maikap, S.; Banerjee, W.; Tien, T.C.; Wang, T.Y.; Yang, J.R. |
國立臺灣大學 |
2010 |
Ruthenium oxide metal nanocrystal capacitors with high-kappa dielectric tunneling barriers for nanoscale nonvolatile memory device applications
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Das, Atanu; Maikap, S.; Lin, C.-H.; Tzeng, P.-J.; Tien, T.-C.; Wang, T.-Y.; Chang, L.-B.; Yang, J.-R.; Tsai, M.-J. |
國立臺灣大學 |
2007 |
Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
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Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. |
國立臺灣大學 |
2007 |
Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2/TiO2 multilayers
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Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Tien, T. C.; Lee, L. S.; Yang, J. R.; Tsai, M.J. |
國立臺灣大學 |
2007 |
Charge storage characteristics of atomic layer deposited RuOx nanocrystals
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Maikap, S.; Wang, T. Y.; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Yang, J. R.; Tsai, M. J. |
國立臺灣大學 |
2007 |
HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications
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Maikap, S.; Tzeng, P. J.; Wang, T. Y.; Lee, H. Y.; Lin, C. H.; Wang,? C. C.; Lee, L. S.; Yang, J. R.; Tsai, M. J. |
國立臺灣大學 |
2007 |
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
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Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M. H.; Maikap, S.; Hsu, C.-H.; Liu, C. W. |
國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
國立臺灣大學 |
2005-05 |
Recent Progress in Mobility-enhancement Technologies
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Liu, C. W.; Maikap, S.; Yu, C.-Y. |
國立臺灣大學 |
2005 |
Abnormal hole mobility of biaxial strained Si
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Liao, M. H.; Chang, S. T.; Lee, M. H.; Maikap, S.; Liu, C. W. |
國立臺灣大學 |
2004-10 |
Ge Outdiffusion Effect on Flicker Noise in Strained-Si nMOSFETs
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Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. |
國立臺灣大學 |
2004 |
Mechanically strained Si/SiGe HBTs
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Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W. |
國立臺灣大學 |
2004 |
Mechanically strained strained-Si NMOSFETs
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Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W. |
國立臺灣大學 |
2004 |
Evidence of Si/SiGe heterojunction roughness scattering
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Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S. |
臺大學術典藏 |
2004 |
Evidence of Si/SiGe heterojunction roughness scattering
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Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.Liucw; Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; LiuCW |
Showing items 1-37 of 37 (1 Page(s) Totally) 1 View [10|25|50] records per page
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