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Showing items 21-37 of 37 (2 Page(s) Totally)
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| 國立臺灣大學 |
2011 |
Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals
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Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R. |
| 國立臺灣大學 |
2011 |
Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors
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Maikap, S.; Banerjee, W.; Tien, T.C.; Wang, T.Y.; Yang, J.R. |
| 國立臺灣大學 |
2010 |
Ruthenium oxide metal nanocrystal capacitors with high-kappa dielectric tunneling barriers for nanoscale nonvolatile memory device applications
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Das, Atanu; Maikap, S.; Lin, C.-H.; Tzeng, P.-J.; Tien, T.-C.; Wang, T.-Y.; Chang, L.-B.; Yang, J.-R.; Tsai, M.-J. |
| 國立臺灣大學 |
2007 |
Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
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Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. |
| 國立臺灣大學 |
2007 |
Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2/TiO2 multilayers
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Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Tien, T. C.; Lee, L. S.; Yang, J. R.; Tsai, M.J. |
| 國立臺灣大學 |
2007 |
Charge storage characteristics of atomic layer deposited RuOx nanocrystals
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Maikap, S.; Wang, T. Y.; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Yang, J. R.; Tsai, M. J. |
| 國立臺灣大學 |
2007 |
HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications
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Maikap, S.; Tzeng, P. J.; Wang, T. Y.; Lee, H. Y.; Lin, C. H.; Wang,? C. C.; Lee, L. S.; Yang, J. R.; Tsai, M. J. |
| 國立臺灣大學 |
2007 |
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
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Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M. H.; Maikap, S.; Hsu, C.-H.; Liu, C. W. |
| 國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
| 國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
| 國立臺灣大學 |
2005-05 |
Recent Progress in Mobility-enhancement Technologies
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Liu, C. W.; Maikap, S.; Yu, C.-Y. |
| 國立臺灣大學 |
2005 |
Abnormal hole mobility of biaxial strained Si
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Liao, M. H.; Chang, S. T.; Lee, M. H.; Maikap, S.; Liu, C. W. |
| 國立臺灣大學 |
2004-10 |
Ge Outdiffusion Effect on Flicker Noise in Strained-Si nMOSFETs
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Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. |
| 國立臺灣大學 |
2004 |
Mechanically strained Si/SiGe HBTs
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Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W. |
| 國立臺灣大學 |
2004 |
Mechanically strained strained-Si NMOSFETs
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Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W. |
| 國立臺灣大學 |
2004 |
Evidence of Si/SiGe heterojunction roughness scattering
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Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S. |
| 臺大學術典藏 |
2004 |
Evidence of Si/SiGe heterojunction roughness scattering
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Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.Liucw; Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; LiuCW |
Showing items 21-37 of 37 (2 Page(s) Totally)
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