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Showing items 6-30 of 37 (2 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T06:31:20Z |
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
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Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:58:49Z |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:58:48Z |
The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs
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Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:23:46Z |
Abnormal hole mobility of biaxial strained Si
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Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:23:45Z |
Novel schottky barrier strained germanium PMOS
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Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:23:45Z |
Mobility-enhancement technologies
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Liu, C.W.; Maikap, S.; Yu, C.-Y.; Liu, Chee Wee |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:55:30Z |
BICMOS devices under mechanical strain
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Liu, C.W.;Maikap, S.;Liao, M.H.;Yuan, F.;Lee, M.H.; Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:55:29Z |
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
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Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:55:28Z |
Package-strain-enhanced device and circuit performance
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Maikap, S.;Liao, M.H.;Yuan, F.;Lee, M.H.;Huang, C.-F.;Chang, S.T.;Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:55:28Z |
Mechanically strained Si-SiGe HBTs
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Yuan, F.;Jan, S.-R.;Maikap, S.;Liu, Y.-H.;Liang, C.-S.;Liu, C.W.; Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:55:27Z |
Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers
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Tzeng, P.J.;Maikap, S.;Lai, W.Z.;Liang, C.S.;Chen, P.S.;Lee, L.S.;Liu, C.W.; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:33:14Z |
Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs
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Chen, P.S.; Hua, W.-C.; Yu, C.-Y.; Tseng, Y.T.; Maikap, S.; Hsu, Y.M.; Liu, C.W.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; Lee, M.H.; CHEE-WEE LIU et al. |
| 國立臺灣大學 |
2012 |
Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure
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Banerjee, W.; Maikap, S.; Rahaman, S.Z.; Prakash, A.; Tien, T.-C.; Li, W.-C.; Yang, J.-R. |
| 國立臺灣大學 |
2011 |
Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals
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Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R. |
| 國立臺灣大學 |
2011 |
Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors
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Maikap, S.; Banerjee, W.; Tien, T.C.; Wang, T.Y.; Yang, J.R. |
| 國立臺灣大學 |
2010 |
Ruthenium oxide metal nanocrystal capacitors with high-kappa dielectric tunneling barriers for nanoscale nonvolatile memory device applications
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Das, Atanu; Maikap, S.; Lin, C.-H.; Tzeng, P.-J.; Tien, T.-C.; Wang, T.-Y.; Chang, L.-B.; Yang, J.-R.; Tsai, M.-J. |
| 國立臺灣大學 |
2007 |
Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
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Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. |
| 國立臺灣大學 |
2007 |
Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2/TiO2 multilayers
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Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Tien, T. C.; Lee, L. S.; Yang, J. R.; Tsai, M.J. |
| 國立臺灣大學 |
2007 |
Charge storage characteristics of atomic layer deposited RuOx nanocrystals
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Maikap, S.; Wang, T. Y.; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Yang, J. R.; Tsai, M. J. |
| 國立臺灣大學 |
2007 |
HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications
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Maikap, S.; Tzeng, P. J.; Wang, T. Y.; Lee, H. Y.; Lin, C. H.; Wang,? C. C.; Lee, L. S.; Yang, J. R.; Tsai, M. J. |
| 國立臺灣大學 |
2007 |
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
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Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M. H.; Maikap, S.; Hsu, C.-H.; Liu, C. W. |
| 國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
| 國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
Showing items 6-30 of 37 (2 Page(s) Totally)
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