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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立臺灣大學 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 臺大學術典藏 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Yang, Jer-Ren et al.; Banerjee, Writam; Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 國立臺灣大學 |
2011 |
Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
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Li, Wei-Chih; Banerjee, Writam; Maikap, Siddheswar; Yang, Jer-Ren |
| 臺大學術典藏 |
2011 |
Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
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Yang, Jer-Ren; Maikap, Siddheswar; Banerjee, Writam; Li, Wei-Chih; Li, Wei-Chih; Banerjee, Writam; Maikap, Siddheswar; Yang, Jer-Ren |
Showing items 1-4 of 4 (1 Page(s) Totally)
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