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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 亞洲大學 |
201310 |
Optimization of SiC Schottky Diode using Linear P for Edge Termination
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Mri, Aryadeep;Mrinal, Aryadeep;Kumar, Vijay;Vivek, N;Vivek, N;Manjunatha, M;Manjunatha, M;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
201306 |
Effects of Antimony and Arsenic Ion Implantation on High Performance of Ultra High Voltage Device
|
Kum, Vasantha;Manjunatha, M;Manjunatha, M;Suresh, Vinay;Suresh, Vinay;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;陳柏安;Chen, P A |
| 亞洲大學 |
201306 |
P-type Shallow Junction as-Implanted Profile Prediction Using Kinetic Monte Carlo Simulation
|
Fra, Antonius;Kur, Erry Dwi;Kurniawan, Erry Dwi;Manjunatha, M;Manjunatha, M.;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2013-10 |
Optimization of SiC Schottky Diode using Linear P for Edge Termination
|
Mri, Aryadeep;Aryadeep Mrinal, ;Kumar, Vijay;Vijay Kumar M P, ;Vivek N, ;Vivek N, ;Manjunatha, M;Manjunatha M, ;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
Showing items 1-4 of 4 (1 Page(s) Totally)
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