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"marchenkov v v"的相关文件
显示项目 21-29 / 29 (共3页)
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| 國立成功大學 |
2019 |
NMR Investigation of the WTe2 Weyl Semimetal below the Topological Transition Temperature
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Antonenko, Antonenko A.O.;Charnaya, E.V.;Lee, M.K.;Chang, L.J.;Haase, J.;Naumov, S.V.;Domozhirova, A.N.;Marchenkov, V.V. |
| 國立成功大學 |
2019 |
Size Effect in the Electrical Conductivity of Thin Films of Topological Insulator Bi2Se3
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Chistyakov, V.V.;Domozhirova, A.N.;Huang, J.C.A.;Marchenkov, V.V. |
| 國立成功大學 |
2019 |
Electronic Structure and Electronic Properties of PtSn4 Single Crystal
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Marchenkov, V.V.;Domozhirova, A.N.;Makhnev, A.A.;Shreder, E.I.;Lukoyanov, A.V.;Naumov, S.V.;Chistyakov, V.V.;Marchenkova, E.B.;Huang, J.C.A.;Eisterer, M. |
| 國立成功大學 |
2017 |
Growth and characterization of MBE-grown (Bi1-xSbx)2Se3 topological insulator
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Liu, Y.;Chong, Chong C.;Chen, W.;Huang, J.-A.;Cheng, Cheng C.;Tsuei, K.;Li, Z.;Qiu, H.;Marchenkov, V.V. |
| 國立成功大學 |
2015-09 |
Nuclear magnetic resonance study of a Bi2Te3 topological insulator
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Podorozhkin, D. Yu.; Charnaya, E. V.; Antonenko, A.; Mukhamad'yarov, R.; Marchenkov, V. V.; Naumov, S. V.; Huang, J. C. A.; Weber, H. W.; Bugaev, A. S. |
| 國立成功大學 |
2015-07-06 |
Gate-tunable coherent transport in Se-capped Bi2Se3 grown on amorphous SiO2/Si
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Liu, Y. H.; Chong, C. W.; Jheng, J. L.; Huang, S. Y.; Huang, J. C. A.; Li, Z.; Qiu, H.; Huang, S. M.; Marchenkov, V. V. |
| 國立成功大學 |
2013-05-07 |
Effect of Ge and Al substitutions on exchange bias in Ni-Mn-Sb alloy
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Lee, M. K.; Xu, L. S.; Marchenkov, V. V.; Wang, R. L.; Chen, R. J.; Guo, S.; Yang, C. P.; Huang, J. C. A. |
| 國立成功大學 |
2012-11 |
Tuning exchange bias through zero field cooling from different remanent states above blocking temperature in Ni50Mn36Sb14 alloy
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Wang, R. L.; Xu, L. S.; Sun, Z. G.; Marchenkov, V. V.; Xiao, H. B.; Xu, L. F.; Huang, J. C. A.; Yang, C. P. |
| 國立成功大學 |
2012-09 |
Effect of thermal cycle on the interfacial antiferromagnetic spin configuration and exchange bias in Ni-Mn-Sb alloy
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Wang, R. L.; Lee, M. K.; Xu, L. S.; Sun, Z. G.; Marchenkov, V. V.; Tien, C.; Huang, J. C. A.; Yang, C. P. |
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