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Institution Date Title Author
國立成功大學 2022-12 Remarkable Reduction in I-G with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT Mazumder;Soumen;Pal;Parthasarathi;Lee;Kuan-Wei;Wang;Yeong-Her
國立成功大學 2022-10 Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics Huang;Cheng-Yu;Mazumder;Soumen;Lin;Pu-Chou;Lee;Kuan-Wei;Wang;Yeong-Her
國立成功大學 2022-03-22 Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application Pal;Parthasarathi;Mazumder;Soumen;Huang;Chih-Wei;Lu;Darsen, Darsen D.;Wang;Yeong-Her
國立成功大學 2021-09 DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation Mazumder;Soumen;Wu;Zhan-Gao;Pan;Cheng, Po;Li;Ssu-Hsien;Wang;Yeong-Her
國立成功大學 2021-05-1 A Low Program Voltage Enabled Flash like AlGaN/GaN Stack Layered MIS-HEMTs Using Trap Assisted Technique Mazumder;Soumen;Pal;Parthasarathi;Tsai;Ting-Jia;Lin;Pu-Chou;Wang;Yeong-Her
國立成功大學 2021-03 Performance Enhancement in N-2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Gamma-Shaped Gate Engineering Yang;Shun-Kai;Mazumder;Soumen;Wu;Zhan-Gao;Wang;Yeong-Her
國立成功大學 2021-02 Combined Implications of UV/O-3 Interface Modulation with HfSiOX Surface Passivation on AlGaN/AlN/GaN MOS-HEMT Mazumder;Soumen;Li;Ssu-Hsien;Wu;Zhan-Gao;Wang;Yeong-Her

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