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Showing items 1-25 of 30 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:41:23Z |
A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology
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Meng, CC; Chiang, MH; Wu, TH |
| 國立交通大學 |
2014-12-08T15:41:05Z |
DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology
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Meng, CC; Lu, SS; Chiang, MH; Chen, HC |
| 國立交通大學 |
2014-12-08T15:39:36Z |
Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrate
|
Meng, CC |
| 國立交通大學 |
2014-12-08T15:39:27Z |
DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology
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Meng, CC; Wu, TH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:38:58Z |
A SiGe micromixer for 2.4/5.2/5.7GHz multiband WLAN applications
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Wang, CY; Lu, SS; Meng, CC; Lin, YS |
| 國立交通大學 |
2014-12-08T15:38:58Z |
A watt-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology
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Meng, CC; Wang, W |
| 國立交通大學 |
2014-12-08T15:37:28Z |
DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking
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Meng, CC; Wu, TH; Lu, SS |
| 國立交通大學 |
2014-12-08T15:37:28Z |
A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-Ghz multiband WLAN applications
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Wang, CY; Lu, SS; Meng, CC; Lin, YS |
| 國立交通大學 |
2014-12-08T15:37:19Z |
A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverter
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Meng, CC; Lin, MQ; Huang, GW |
| 國立交通大學 |
2014-12-08T15:36:12Z |
The determination of S-parameters from the poles of voltage-gain transfer function for RF IC design
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Lu, SS; Lin, YS; Chiu, HW; Chen, YC; Meng, CC |
| 國立交通大學 |
2014-12-08T15:26:10Z |
A high isolation CMFB downconversion micromixer using 0. 18-urn deep N-well CMOS technology
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Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:10Z |
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
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Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:09Z |
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
|
Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:09Z |
A high isolation CMFB downconversion micromixer using 0.18-mu m deep N-well CMOS technology
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Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:25Z |
A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combiner
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Wu, TH; Meng, CC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:25Z |
Linearity improvement for power MESFET devices using source inductive feedback and input impedance mismatch
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Meng, CC; Wang, W |
| 國立交通大學 |
2014-12-08T15:19:20Z |
A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements
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Meng, CC; Hsu, SK; Wu, TH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:07Z |
A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator
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Meng, CC; Hsu, SK; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:02Z |
Determining GaInP/GaAs HBT device structure by DC measurements on a two-emitter HBT device and high frequency transit time measurements
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Meng, CC; Tsou, BC; Tseng, SC |
| 國立交通大學 |
2014-12-08T15:18:53Z |
A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
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Wu, TH; Meng, CC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:18:38Z |
5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformers
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Meng, CC; Chen, CH; Chang, YW; Huang, GW |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
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Meng, CC; Su, JY; Yang, SM |
| 國立交通大學 |
2014-12-08T15:18:20Z |
Compact 5.2-GHz GaInP/GaAs HBT gilbert upconverter using lumped rat-race hybrid and current combiner
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Meng, CC; Wu, TH; Lin, MC |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The port-to-port isolation of the downconversion P-type micromixer using different N-well topologies
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Tseng, SC; Meng, CC; Li, YH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devices
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Meng, CC; Su, JY; Tsou, BC; Huang, GW |
Showing items 1-25 of 30 (2 Page(s) Totally)
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