| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-02-21T23:30:43Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang, Chun Yuan; Chou, Chun Yi; Shiue, Han Fang; Chen, Hsing Yang; Ling, Chen Hsiang; Shyue, Jing Jong; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
|
Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-09-21T23:19:32Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang, Chin I.; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Shyue, Jing Jong; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-21T23:58:56Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
|
Chou, Chun Yi; Lee, Wei Hao; Chuu, Chih Piao; Chen, Tse An; Hou, Cheng Hung; Yin, Yu Tung; Wang, Ting Yun; Shyue, Jing Jong; Li, Lain Jong; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
|
Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
|
Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:47Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
|
Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-04-21T23:17:24Z |
Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing
|
Chang, Teng Jan; Jiang, Yu Sen; Yi, Sheng Han; Chou, Chun Yi; Wang, Chin I.; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 中原大學 |
2001-10 |
Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes
|
Miin-Jang Chen;Ching-Fuh Lin;M. H. Lee;S. T. Chang;C. W. Liu |
| 臺大學術典藏 |
2018-09-10T08:46:35Z |
Charged-Particle-Beam Patterning Without Resist
|
Kuen-Yu Tsai;Miin-Jang Chen;Samuel C. Pan; Kuen-Yu Tsai; Miin-Jang Chen; Samuel C. Pan; KUEN-YU TSAI |
| 臺大學術典藏 |
2022-04-21T23:17:24Z |
Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation
|
Ling, Chen Hsiang; Chou, Chun Yi; Chung, Tsai Fu; Shyue, Jing Jong; JER-REN YANG; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-09-21T23:30:31Z |
Cryogenic Si/SiGe Heterostructure Flash Memory Devices
|
Hou, Wei Chih; Hsu, Nai Wen; Wang, Tz Ming; Liu, Chia You; Kao, Hsiang Shun; MIIN-JANG CHEN; JIUN-YUN LI |
| 臺大學術典藏 |
2021-02-04T02:27:47Z |
Dielectric properties and reliability enhancement of atomic layer deposited thin films by: In situ atomic layer substrate biasing
|
Chou, C.-Y.;Chang, T.-J.;Wang, C.-I.;Wang, C.-Y.;Yin, Y.-T.;Chung, T.-F.;Yang, J.-R.;Lin, H.-C.;Chen, M.-J.; Chou, C.-Y.; Chang, T.-J.; Wang, C.-I.; Wang, C.-Y.; Yin, Y.-T.; Chung, T.-F.; Yang, J.-R.; Lin, H.-C.; Chen, M.-J.; JER-REN YANG; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:45Z |
Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
|
Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
|
Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:47Z |
Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
|
Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2019-03-11T08:02:02Z |
Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments
|
Miin-Jang Chen;Min-Hung Lee;Hsin-ChihLin;Chin-Lung Kuo;Jhih-Jie Huang;Ming-Lun Chang;Li-Tien Huang;M. H.Liao; M. H.Liao; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen |
| 中原大學 |
2001 |
Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation
|
C. W. Liu;C. H. Lin;M. H. Lee;S. T. Chang;Y. H. Liu;Miin-Jang Chen;Ching-Fuh Lin |
| 臺大學術典藏 |
2022-06-21T23:23:53Z |
Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering
|
Yi, Sheng Han; Chan, Yu Chen; Mo, Chi Lin; HSIN-CHIH LIN; MIIN-JANG CHEN |
