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机构 日期 题名 作者
臺大學術典藏 2018-09-10T04:31:35Z Advances in high $κ$ gate dielectrics for Si and III-V semiconductors Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG; Chabal, YJ; Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA
臺大學術典藏 2018-09-10T04:31:35Z Advances in high $κ$ gate dielectrics for Si and III-V semiconductors Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG; Chabal, YJ; Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA
臺大學術典藏 2018-09-10T04:11:33Z Advances in high & kappa gate dielectrics for Si and III-V semiconductors Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:33Z Advances in high & kappa gate dielectrics for Si and III-V semiconductors Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:47Z Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL
臺大學術典藏 2018-09-10T03:46:47Z Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL
臺大學術典藏 2018-09-10T03:46:45Z Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:45Z Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG

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