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机构 日期 题名 作者
國立東華大學 2007 The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots 祁錦雲; Jim-Yong Chi; S A Blokhin; A V Sakharov; N A Maleev; M M Kulagina; Yu M Shernyakov; I I Novikov; N Yu Gordeev; M V Maximov; A G Kuzmenkov; V M Ustinov; N N Ledentsov; A R Kovsh; S S Mikhrin; G Lin
國立東華大學 2003-12 1.3 μm InAs-InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor DBRs 祁錦雲; Jim-Yong Chi; J. S. Wang; N. A. Maleev; A. R. Kovsh; R. S. Hsiao; C. M. Lai; L. Wei; J. F. Chen; J. A. Lott; N. N. Ledentsov; V. M. Ustinov; J. Y. Chi
國立東華大學 2003-09 1.3 micron single lateral mode lasers based on InAs QDs and InGaAsN quantum wells 祁錦雲; Jim-Yong Chi; A.R.Kovsh; D.A.Livshits; N.A.Maleev; A.E.Zhukov; V.M.Ustinov; J.S.Wang; R.S.Hsiao; G.Lin; J.Y.Chi; N.N.Ledentsov
國立東華大學 2003-06 Structural and optical properties of Ga(As,N)/GaAs epilayers grown with continuous and pulsed deposition and nitridization 祁錦雲; Jim-Yong Chi; Soshnikov; A. R. Kovsh; V. M. Ustinov; N. V. Kryzhanovskaya; N. N. Ledentsov; D. Bimberg; H. Kirmse; W. Neumann; O. M. Gorbenko; J. S. Wang; R. S. Hsiao; J. Chi
國立東華大學 2002-12 1.3 m lasers based on InAs/GaAs quantum dots with high optical gain 祁錦雲; Jim-Yong Chi; R. Kovsh; N. A. Maleev; A. E. Zhukov; S. S. Mikhrin; D. A. Livshits; Y. M. Shernyakov; A . 11 V. Sakharov; M. V. Maximov; V. M. Ustinov; Zh. I. Alferov; J. S. Wang; R. S. Shiao; L. Wei; Y. T. Wu; G. Lin; J. Y. Chi; N. N. Ledentsov; D. Bimberg
國立東華大學 2002-06 High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells 祁錦雲; Jim-Yong Chi; R. Kovsh; A. E. Zhukoz; N. A. Maleev; S. S. Mikhrin; A. V. Vasil'ev; Yu. M. Shernyakov; D. A. Livshits; M. V. Maximov; D. S. Sizov; N. V. Kryzhanovskaya; N. A. Pikhtin; V. A. Kapitonov; I. S. Tarasov; N. N. Ledentsov; V. M. Ustinov; J. S. Wang; L. Wei; G. Lin ; J. Y. Chi

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