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机构 日期 题名 作者
國立交通大學 2015-07-21T08:28:49Z Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications Ismail, Muhammad; Rana, Anwar Manzoor; Talib, Ijaz; Tsai, Tsung-Ling; Chand, Umesh; Ahmed, Ejaz; Nadeem, Muhammad Younus; Aziz, Abdul; Shah, Nazar Abbas; Hussain, Muhammad
國立交通大學 2014-12-08T15:36:20Z Resistive switching characteristics of Pt/CeOx/TiN memory device Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:35:07Z Forming-free bipolar resistive switching in nonstoichiometric ceria films Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen

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