|
|
???tair.name??? >
???browser.page.title.author???
|
"nguyen h q"???jsp.browse.items-by-author.description???
Showing items 1-14 of 14 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立成功大學 |
2020 |
Solving a Type of the Tikhonov Regularization of the Total Least Squares by a New S-Lemma
|
Nguyen, H.-Q.;Sheu, R.-L.;Xia, Y. |
| 國立交通大學 |
2019-04-02T06:04:34Z |
Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatments
|
Trinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T. |
| 國立交通大學 |
2019-04-02T05:59:41Z |
Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodes
|
Yu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C. |
| 國立交通大學 |
2019-04-02T05:58:46Z |
Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
|
Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2019-04-02T05:57:57Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
|
Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
| 國立成功大學 |
2017 |
Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition
|
Hsiao, C.-J.;Ha, M.-T.-H.;Liu, C.-K.;Nguyen, H.-Q.;Yu, H.-W.;Chang, S.-P.;Wong, Y.-Y.;Maa, J.-S.;Chang, S.-J.;Chang, E.Y. |
| 國立交通大學 |
2015-07-21T11:21:00Z |
Control of metamorphic buffer structure and device performance of InxGa1-xAs epitaxial layers fabricated by metal organic chemical vapor deposition
|
Nguyen, H. Q.; Yu, H. W.; Luc, Q. H.; Tang, Y. Z.; Phan, V. T. H.; Hsu, C. H.; Chang, E. Y.; Tseng, Y. C. |
| 國立交通大學 |
2014-12-08T15:38:19Z |
Effect of substrate misorientation on the material properties of GaAs/Al(0.3)Ga(0.7)As tunnel diodes
|
Yu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C. |
| 國立交通大學 |
2014-12-08T15:33:42Z |
Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
|
Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:30:30Z |
In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
|
Nguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L. |
| 國立交通大學 |
2014-12-08T15:21:44Z |
Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatments
|
Trinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T. |
| 國立交通大學 |
2014-12-08T15:20:42Z |
Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy
|
Yu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q. |
| 國立交通大學 |
2014-12-08T15:06:33Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor
|
Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
| 國立成功大學 |
2013-01 |
In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
|
Nguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L. |
Showing items 1-14 of 14 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
