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"nguyen h q"
Showing items 11-15 of 15 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:30:30Z |
In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
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Nguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L. |
| 國立交通大學 |
2014-12-08T15:21:44Z |
Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatments
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Trinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T. |
| 國立交通大學 |
2014-12-08T15:20:42Z |
Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy
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Yu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q. |
| 國立交通大學 |
2014-12-08T15:06:33Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor
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Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
| 國立成功大學 |
2013-01 |
In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
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Nguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L. |
Showing items 11-15 of 15 (1 Page(s) Totally)
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