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國立交通大學 |
2017-04-21T06:48:24Z |
Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond
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Yu, Ming H.; Li, J. H.; Lin, H. H.; Chen, C. H.; Ku, K. C.; Nieh, C. F.; Hisa, H.; Sheu, Y. M.; Tsai, C. W.; Wang, Y. L.; Chu, H. Y.; Cheng, H. C.; Lee, T. L.; Chen, S. C.; Liang, M. S. |
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