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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 臺大學術典藏 |
2020-06-11T06:49:05Z |
Design Considerations of the Gate Drive Circuit for GaN HEMT Devices
|
Niu, Y.-C.;Huang, Y.-T.;Chen, C.-L.;Chen, Y.-M.; Niu, Y.-C.; Huang, Y.-T.; Chen, C.-L.; Chen, Y.-M.; YAOW-MING CHEN |
| 臺大學術典藏 |
2020-06-11T06:49:05Z |
Design Considerations of the Gate Drive Circuit for GaN HEMT Devices
|
Niu, Y.-C.;Huang, Y.-T.;Chen, C.-L.;Chen, Y.-M.; Niu, Y.-C.; Huang, Y.-T.; Chen, C.-L.; Chen, Y.-M.; YAOW-MING CHEN |
| 臺大學術典藏 |
2017 |
Design of boost power factor corrector with GaN HEMT devices
|
Niu, Y.-C.;Yang, C.-J.;Chen, Y.-M.;Chang, Y.-R.; Niu, Y.-C.; Yang, C.-J.; Chen, Y.-M.; Chang, Y.-R.; YAOW-MING CHEN |
| 臺大學術典藏 |
2017 |
Design of boost power factor corrector with GaN HEMT devices
|
Niu, Y.-C.;Yang, C.-J.;Chen, Y.-M.;Chang, Y.-R.; Niu, Y.-C.; Yang, C.-J.; Chen, Y.-M.; Chang, Y.-R.; YAOW-MING CHEN |
Showing items 1-4 of 4 (1 Page(s) Totally)
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