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| 臺大學術典藏 |
2020-06-16T06:33:19Z |
BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown.
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Chen, Pin-Shiang;Lee, Shou-Chung;Oates, A. S.;Liu, Chee Wee; Chen, Pin-Shiang; Lee, Shou-Chung; Oates, A. S.; Liu, Chee Wee; CHEE-WEE LIU |
| 國立交通大學 |
2017-04-21T06:49:41Z |
Limitation of low-k reliability due to dielectric breakdown at vias
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Lee, Shou-Chung; Oates, A. S.; Chang, Kow Ming |
| 國立交通大學 |
2017-04-21T06:49:40Z |
FUNDAMENTAL UNDERSTANDING OF POROUS LOW-K DIELECTRIC BREAKDOWN
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Lee, Shou-Chung; Oates, A. S.; Chang, Kow-Ming |
| 國立交通大學 |
2017-04-21T06:49:10Z |
A comprehensive model for plasma damage enhanced transistor reliability degradation
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Weng, W. T.; Oates, A. S.; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:12:02Z |
Field Dependence of Porous Low-k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions
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Lee, S. C.; Oates, A. S.; Chang, K. M. |
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