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显示项目 1151-1160 / 1528 (共153页)
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机构 日期 题名 作者
臺大學術典藏 2018-09-10T08:12:53Z Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing Chang, YC;Merckling, C;Penaud, J;Lu, CY;Wang, WE;Dekoster, J;Meuris, M;Caymax, M;Heyns, M;Kwo, J;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:53Z Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing Chang, YC;Merckling, C;Penaud, J;Lu, CY;Wang, WE;Dekoster, J;Meuris, M;Caymax, M;Heyns, M;Kwo, J;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:51Z Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:51Z Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:51Z Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others
臺大學術典藏 2018-09-10T08:12:51Z Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others
臺大學術典藏 2018-09-10T08:12:49Z InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:49Z InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:31Z Prompt and non-prompt $J/\\psi$ production in $pp$ collisions at $\\sqrt{s}=7$ TeV Khachatryan, Vardan;others; Khachatryan, Vardan; others; PAO-TI CHANG; YEE HSIUNG; MIN-ZU WANG
臺大學術典藏 2018-09-10T08:12:31Z Prompt and non-prompt $J/\\psi$ production in $pp$ collisions at $\\sqrt{s}=7$ TeV Khachatryan, Vardan;others; Khachatryan, Vardan; others; PAO-TI CHANG; YEE HSIUNG; MIN-ZU WANG

显示项目 1151-1160 / 1528 (共153页)
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