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Showing items 11-20 of 23  (3 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:47:23Z Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy Lee, MC; Lin, HC; Pan, YC; Shu, CK; Ou, J; Chen, WH; Chen, WK
國立交通大學 2014-12-08T15:46:18Z Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition Shu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:46:16Z A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN Ou, J; Pan, YC; Lee, WH; Shu, CK; Lin, HC; Lee, MC; Chen, WH; Chiang, CI; Chang, H; Chen, WK
國立交通大學 2014-12-08T15:45:54Z Optical and electrical investigations of isoelectronic In-doped GaN films Shu, CK; Lee, WH; Pan, YC; Chen, CC; Lin, HC; Ou, J; Chen, WH; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:42:52Z Thermal stability study of Ni/Ta n-GaN Schottky contacts Chen, GL; Chang, FC; Shen, KC; Ou, J; Chen, WH; Lee, MC; Chen, WK; Jou, MJ; Huang, CN
國立交通大學 2014-12-08T15:27:45Z Composition control in the growth of AlAs1-xSbx alloys OU, J; CHEN, WK
國立交通大學 2014-12-08T15:27:16Z The effects of isoelectronic in-doping in GaN films grown by MOCVD Shu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:04:05Z ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALASXSB1-X FILMS USING TERTIARYBUTYLARSINE CHEN, WK; OU, J; LEE, WI
國立交通大學 2014-12-08T15:03:03Z Influence of As/Al and Sb/Al gas flow ratios on growth of AlAs1-xSbx alloys Chen, WK; Ou, J
國立交通大學 2014-12-08T15:01:46Z Crystalline structure changes in GaN films grown at different temperatures Lin, HC; Ou, J; Chen, WK; Chen, WH; Lee, MC

Showing items 11-20 of 23  (3 Page(s) Totally)
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