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Showing items 16-25 of 96  (10 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2007 Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD T.S. Chang;T.C. Chang;P.T. Liu;T.S.W. Tsao;F.S. Yeh
國立中山大學 2007 The instability of a-Si : H TFT under mechanical strain with high frequency ac bias stress M.C. Wang;T.C. Chang;P.T. Liu;W. Xiao;Y.P. Lin;J.R. Chen
國立中山大學 2007 Effects of supercritical fluids activation on carbon nanotube field emitters P.T. Liu;C.T. Tsai;T.C. Chang;K.T. Kin;P.L. Chang;C.M. Chen;Y.C. Chen
國立中山大學 2007 Using Double layer CoSi2 Nanocrystals to Improve the Memory Effects of Nonvolatile Memory Devices Y.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;U.S. Chen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學 2007 Nonvolatile polycrystalline silicon thin film transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.H. Yen;C.F. Weng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學 2007 Degradation behaviors of trigate nanowires poly-si TFTs with NH3 plasma passivation under hot-carrier stress Y.C. Wu;T.C. Chang;P.T. Liu;L.W. Fen
國立中山大學 2007 Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals P.H. Yeh;L.J. Chen;P.T. Liu;D.Y. Wang;T.C. Chang
國立中山大學 2007 Nickel silicide nanocrystals embedded in SiO2 and HfO2 for Nonvolatile Memory Application F.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學 2007 Metal nanocrystals as charge storage nodes for nonvolatile memory devices P.H. Yeh;L.J. Chen;P.T. Liu;D.Y. Wang;T.C. Chang
國立中山大學 2007 Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide Y.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou

Showing items 16-25 of 96  (10 Page(s) Totally)
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