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Institution	Date	Title	Author
國立中山大學	2007	Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application	W.R. Chen;T.C. Chang;P.T. Liu;C.H. Tu;C.F. Weng;S.W. Tsao;C.Y. Chang
國立中山大學	2007	Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer	C.H. Tu;T.C. Chang;P.T. Liu;C.F. Weng;H.C. Liu;L.T. Chang;S.K. Lee;W.R. Chen;S.M. Sze;C.Y. Chang
國立中山大學	2007	Improved Performance of F-Ions-Implanted Poly-Si Thin Film Transistors using Solid Phase Crystallization and Excimer Laser Crystallization	C.H. Tu;T.C. Chang;P.T. Liu;C.Y. Yang;L.W. Feng;C.C. Tsai;L.T. Chang;Y.C. Wu;S.M. Sze;C.Y. Chang
國立中山大學	2007	A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.S. Lin;B.H. Tseng;J.H. Shy;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Nonvolatile Si/SiO2/Si3N4/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;J.Y. Chin;P.H. Yeh;L.W. Feng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2006	A Novel Fabrication of Germanium Nanocrystal Embedded in Silicon-Oxygen-Nitride Layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;C.F. Weng;J.H. Shy;B.H. Tseng;T.Y. Tseng;S.M. Sze;C.Y. Chang
國立中山大學	2006	Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC	C.H. Tu;T.C. Chang;P.T. Liu;C.Y. Yang;C.H. Liu;W.R. Chen;Y.C. Wu;C.Y. Chang
國立中山大學	2006	Temperature effects of n-MOSFET devices with uniaxial mechanical strains	M.N. Tsai;T.C. Chang;P.T. Liu;Osbert Cheng;C.T. Huang
國立中山大學	2006	Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;S.M. Sze;C.Y. Chang
國立中山大學	2006	Enhancement of Brightness Uniformity by a New Voltage-Modulated Pixel Design for AMOLED Displays	H.Y. Lu;P.T. Liu;T.C. Chang;S. Chi
國立中山大學	2006	Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs	T.S. Chang;T.C. Chang;P.T. Liu;T.S. Chang;F.S. Yeh
國立中山大學	2006	Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation	C.H. Tu;T.C. Chang;P.T. Liu;C.H. Chen;C.Y. Yang;Y.C. Wu;H.C. Liu;L.T. Chang;C.C. Tsai;S.M. Sze;C.Y. Chang
國立中山大學	2006	A novel method for growing polycrystalline Ge layer by using UHVCVD	C.H. Tu;T.C. Chang;P.T. Liu;T.H. Yang;H.W. Zan;C.Y. Chang
國立中山大學	2006	Application of the low dielectric methyl-silsesquiazane (MSZ)as a passivation layer on TFT-LCD	T.S. Chang;T.C. Chang;P.T. Liu;C.Y. Chiang;S.C. Chen;F.S. Yeh
國立中山大學	2006	A novel self aligned etch-stopper structure with lower photo leakage for AMLCD and sensor applications	C.Y. Liang;F.Y. Gan;P.T. Liu;F.S. Yen;H.L. Chen;T.C. Chang
國立中山大學	2006	High performance metal-induced lateral-crystallization polysilcion thin film transistor with multiple nanowire channel and multiple gates	Y.C. Wu;T.C. Chang;P.T. Liu;C.W. Chou;Y.C. Wu;C.H. Tu;C.Y. Chang
國立中山大學	2006	Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcohol	P.T. Liu;C.T. Tsai;T.C. Chang;K.T. King;P.L. Chang;C.M. Chen;H.F. Cheng
國立中山大學	2006	Short-diode like diffusion capacitance of organic light emission devices	M.N. Tasi;T.C. Chang;P.T. Liu;C.W. Ko;C.J. Chen;K.M. Lo
國立中山大學	2006	The Improved Memory Window for Ge Nanocrystals Embedded in SiON Layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;Simon M. Sze;C.Y. Chang
國立中山大學	2006	Formation of silicon germanium nitride layer with distributed charge storage elements	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;W.R. Chen;C.C. Tsai;L.T. Chang;C.Y. Chan
國立中山大學	2006	Improvement of Hydrogenated Amorphous Silicon TFT Performances With Low-k Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer	T.S. Chang;T.C. Chang;P.T. Liu;T.S. Chang;C.H. Tu;F.S. Yeh
國立中山大學	2006	High-performance polycrystalline silicon thin-film transistors with oxide–nitride–oxide gate dielectric and multiple nanowire channels	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;C.C. Tsai;T.S. Chang;Chen-Hsin Lien
國立中山大學	2005	Improvement of reliability for polycrystalline thin film transistor using self-aligned fluorinated silica glass spacers	C.H. Tu;T.C. Chang;P.T. Liu;H.W. Zan;Y.H. Tai;Y.C. Wu;C.Y. Chang
國立中山大學	2005	Effects of oxygen plasma ashing on barrier dielectric SiCN film	C.W. Chen;T.C. Chang;P.T. Liu;T.S. Tsai;T.Y. Tseng
國立中山大學	2005	Low power device with NiSi2 nanocrystals embedded in silicon dioxide layer	P.H. Yen;C.H. Yu;L.J. Chen;H.H. Wu;P.T. Liu;T.C. Chang
國立中山大學	2005	Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric	F.M. Yang;T.C. Chang;P.T. Liu;C.W. Chen;Y.H. Tai;J.C. Lou
國立中山大學	2005	An interfacial investigation of high dielectric constant material hafnium oxide on Si substrate	S.C. Chen;J.C. Lou;C.H. Chien;P.T. Liu;T.C. Chang
國立中山大學	2005	High performance hydrogenated amorphous Si TFT for AMLCD and AMOLED	C.W. Chen;T.C. Chang;P.T. Liu;T.Y. Tseng
國立中山大學	2005	Leakage conduction behavior in electron-beam-cured nanoporous silicate films	P.T. Liu;T.M. Tsai;T.C. Chang
國立中山大學	2005	A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide	T.C. Chang;S.T. Yan;Y.T. Chen;P.T. Liu;S.M. Sze
國立中山大學	2005	Electrical degradation of n-channel poly-si TFT under AC stress	C.W. Chen;T.C. Chang;P.T. Liu;H.Y. Lu;C.F. Weng;C.W. Hu;T.Y. Tseng
國立中山大學	2005	Effects of channel width on electrical characteristics of polysilicon TFTs with nanowire channel	Y.C. Wu;T.C. Chang;P.T. Liu;C.S. Chen;C.H. Tu;H.W. Zan;Y.H. Tai;C.Y. Chang
國立中山大學	2005	Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channel	Y.C. Wu;T.C. Chang;P.T. Liu;C.W. Chou;Y.C. Wu;C.H. Tu;C.Y. Chang
國立中山大學	2005	Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low voltage nonvotatile memeory technology	T.C. Chang;P.T. Liu;S.T. Yan;S.M. Sze
國立中山大學	2005	Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-flim transistors by pattern-dependent metal-induced lateral crystallization	Y.C. Wu;T.C. Chang;C.W. Chen;Y.C. Wu;P.T. Liu;C.H. Tu;C.Y. Chang
國立中山大學	2005	Memeory effect of oxide/ oxygen-incorporated silicon carbide/ oxide sandwiched structure	T.C. Chang;P.T. Liu;S.T. Yan;F.M. Yang;S.M. Sze
國立中山大學	2005	Enhanced performance of poly-Si thin film transistors using fluorine ion implantation	C.H. Tu;T.C. Chang;P.T. Liu;H.W. Zan;Y.H. Tai;Y.C. Wu;C.Y. Chang
國立中山大學	2005	Mobility enhancement of polycrystalline-Si thin-film transistor using nanowire channels by pattern-dependent metal-induced lateral crystallization	Y.C. Wu;T.C. Chang;P.T. Liu;Y.C. Wu;C.W. Chou;C.Y. Chang
國立中山大學	2004	Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application	T.C. Chang;T.M. Tsai;P.T. Liu;S.T. Yan;Y.C. Chang;H. Aoki;S.M. Sze;T.Y. Tseng
國立中山大學	2004	Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;T.Y. Tseng
國立中山大學	2004	CMP of Ultra Low-k Material Porous-Polysilazane (PPSZ) for Interconnect Applications	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;Y.C. Chang;T.Y. Tseng
國立中山大學	2004	CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;Y.C. Chang;T.Y. Tseng
國立中山大學	2004	CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;T.Y. Tseng
國立中山大學	2004	A novel distributed charge storage with GeO2 nano-dots	T.C. Chang;S.T. Yan;P.T. Liu;C.H. Hsu;M.T. Tang;S.M. Sze
國立中山大學	2004	Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications	T.C. Chang;S.T. Yan;P.T. Liu;H. Aoki;S.M. Sze
國立中山大學	2004	Structrual characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization	J.H. Wang;P.T. Liu;T.C. Chang;L.J. Chen
國立中山大學	2004	CMP of ultra low-k Methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications	T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;T.Y. Tseng
國立中山大學	2004	Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integraged interconnect application	T.C. Chang;T.M. Tsai;P.T. Liu;Y.C. Chang;J. Aoki;S.M. Sze;T.Y. Tseng
國立中山大學	2004	Quasisuperlattice storage: A concept of multilevel charge stoage	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze
國立中山大學	2004	Cu-penetration induced breakdown mechanism for a-SiCN	C.W. Chen;P.T. Liu;T.C. Chang;J.H. Yang;T.M. Tsai;H.H. Wu;T.Y. Tseng

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