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Showing items 6-15 of 96  (10 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2007 Source-drain barrier height engineering for suppressing the a-Si:H TFTs photo leakage current M.C. Wang;T.C. Chang;P.T. Liu;S.W. Tsao;J.R. Chen
國立中山大學 2007 Nonvolatile memory characteristics of Nickel-Silicon-Nitride nanocrystal W.R. Chen;T.C. Chang;P.T. Liu;J.L. Yen;C.H. Tu;C.Y. Chang
國立中山大學 2007 Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids P.T. Liu;C.T. Tsai;T.C. Chang;C.W. Wang;P.Y. Yang;F.S. Yen
國立中山大學 2007 Photo leakage currents characteristic of F incorporated hydrogenated amorphous silicon thin-film transistor M.C. Wang;T.C. Chang;P.T. Liu;S.W. Tsao;J.R. Chen
國立中山大學 2007 Pi-shape gate Polycrystalline Silicon Thin-Film-Transistor for Nonvolatile Memory Applications S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;C.C. Ko;Sidney Yang;L.W. Feng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學 2007 A low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization C.T. Tasi;T.C. Chang;P.T. Liu;P.Y. Yang;Y.C. Kuo;K.T. Kin;P.L. Chang;F.S. Yeh
國立中山大學 2007 The suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metal M.C. Wang;T.C. Chang;P.T. Liu;R.W. Xiao;L.F. Lin;Y.Y. Li;F.S. Huang;J.R. Chen
國立中山大學 2007 Nickel nanocrystals with HfO2 blocking oxide for Nonvolatile Memory Application F.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學 2007 Formation of stacked Ni silicide nanocrystals for nonvolatile memory application W.R. Chen;T.C. Chang;P.T. Liu;P.S. Lin;C.H. Tu;C.Y. Chang
國立中山大學 2007 Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors M.C. Wang;T.C. Chang;P.T. Liu;Y.Y. Li;R.W. Xiao;L.F. Lin;J.R. Chen

Showing items 6-15 of 96  (10 Page(s) Totally)
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