| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
|
S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy
|
S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes
|
A. Krier,; M. Stone,; Q. D. Zhuang,; P. W. Liu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy
|
P. W. Liu,; G. Tsai,; H. H. Lin,; A. Krier,; Q. D. Zhuang,; M. Stone,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy
|
P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
GaAsSb/GaAs quantum wells grown by MBE
|
H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
Study on the band line-up of GaAsSb/GaAs quantum wells
|
C. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers
|
C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers
|
G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes
|
H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells
|
T. T. Chen,; W. S. Su,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy
|
G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu; Y. S. Huang; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser
|
H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers
|
HAO-HSIUNG LIN; H. H. Lin,; P. W. Liu,; G. H. Liao, |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells
|
T. T. Chen,;C. H. Chen,;W. Z. Cheng,;W. S. Su,;M. H. Ya,;Y. F. Chen,;P. W. Liu,;H. H. Lin,; T. T. Chen,; C. H. Chen,; W. Z. Cheng,; W. S. Su,; M. H. Ya,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
Low-threshold ~1.3m GaAsSb quantum well laser
|
P. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser
|
P.-W. Liu,; M.-H. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well
|
P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well
|
M. H. Lee; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 國立臺灣海洋大學 |
2007 |
Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu;P. Sitarek;Y. S. Huang;P. W. Liu;J. M. Lin;H. H. Lin;K. K. Tiong |
| 國立臺灣海洋大學 |
2006 |
Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells
|
H P Hsu;P Sitarek;Y S Huang;P W Liu;J M Lin;H H Lin;K K Tiong |
| 國立臺灣海洋大學 |
2003-01 |
Hydrogen susceptibility of an interstitial free steel
|
P.W Liu; J.K Wu |