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Showing items 36-45 of 49 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:04:44Z |
DIAMOND FILM GROWTH ON CEMENTED TUNGSTEN CARBIDES STUDIED BY SEM, AES AND XPS
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CHEN, JL; HUANG, TH; PAN, FM; KUO, CT; CHANG, CS; LIN, TS |
| 國立交通大學 |
2014-12-08T15:03:17Z |
EFFECT OF OXYGEN IMPURITY ON MICROSTRUCTURE AND BORON PENETRATION IN A BF2+ IMPLANTED LPCVD STACKED AMORPHOUS-SILICON P(+) GATED PMOS CAPACITOR
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LIN, CY; PAN, FM; CHOU, PF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:08Z |
EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTH
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TSENG, HC; CHANG, CY; PAN, FM; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:03:08Z |
SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; PAN, FM |
| 國立交通大學 |
2014-12-08T15:03:07Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:03Z |
A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICES
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LIN, CY; JUAN, KC; CHANG, CY; PAN, FM; CHOU, PF; HUNG, SF; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:02:54Z |
A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
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Guo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT |
| 國立交通大學 |
2014-12-08T15:02:26Z |
Schottky contact and the thermal stability of Ni on n-type GaN
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Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY |
| 國立交通大學 |
2014-12-08T15:02:14Z |
Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor deposition
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Tseng, HC; Pan, FM; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:45Z |
Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growth
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Tseng, HC; Chang, CY; Pan, FM; Chen, LP |
Showing items 36-45 of 49 (5 Page(s) Totally)
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