|
"pan hsi jen"的相關文件
顯示項目 1-25 / 29 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
| 國立成功大學 |
2002-01-17 |
Highly hydrogen-sensitive Pd/InP metaloxide-semiconductor Schottky diode hydrogen sensor
|
Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Thei, Kong-Beng; Liu, Wen-Chau; Chen, Huey-Ing |
| 國立成功大學 |
2002-01 |
Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures
|
Chiou, Wen-Huei; Pan, Hsi-Jen; Liu, Rong-Chau; Chen, Chun-Yuan; Wang, Chih-Kai; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes
|
Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Wang, Chik-Kai |
| 國立成功大學 |
2001-09 |
Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor
|
Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Cheng, Shiou-Ying; Yu, Kuo-Hui |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
|
Liu, Wen-Chau; Pan, Hsi-Jen; Yen, Chih-Hung; Lin, Kuan-Po; Wu, Cheng-Zu; Chiou, Wen-Hui; Chen, Chin-Ying |
| 國立成功大學 |
2001-06 |
On the multiple negative-differential-resistance (MNDR) InGaP/GaAs resonant tunneling bipolar transistors
|
Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Feng, Shun-Ching; Lin, Kun-Wei; Yu, Kuo-Hui; Laih, Lih-Wen |
| 國立成功大學 |
2001-05 |
Characteristics of delta-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)
|
Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Pan1, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-05 |
Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
|
Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-03 |
Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor
|
Pan, Hsi-Jen; Feng, Shun-Ching; Wang, Wei-Chou; Lin, Kun-Wei; Yu, Kuo-Hui; Wu, Cheng-Zu; Laih, Lih-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2001-02 |
Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs)
|
Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Wu, Cheng-Zu; Liu, Wen-Chau; Laih, Lin-Wen; Cheng, Shiou-Ying |
| 國立成功大學 |
2001-02 |
Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures
|
Wang, Wei-Chou; Pan, Hsi-Jen; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-12 |
Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors
|
Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Chin-Chuan; Yu, Kuo-Hui; Lin, Kun-Wei; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor
|
Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan |
| 國立成功大學 |
2000-09 |
Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor
|
Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Laih, Lih-Wen; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-08 |
Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications
|
Liu, Wen-Chau; Wang, Wei-Chou; Pan, Hsi-Jen; Chen, Jing-Yuh; Cheng, Shiou-Ying; Lin, Kun-Wei; Yu, Kuo-Hui; Thei, Kong-Beng; Cheng, Chin-Chuan |
| 國立成功大學 |
2000-07 |
A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices
|
Liu, Wen-Chau; Thei, Kong-Beng; Wang, Wei-Chou; Pan, Hsi-Jen; Wuu, Shou-Gwo; Lei, Ming-Ta; Wang, Chung-Shu; Cheng, Shiou-Ying |
| 國立成功大學 |
2000-04 |
A new wide voltage operation regime double heterojunction bipolar transistor
|
Cheng, Shiou-Ying; Pan, Hsi-Jen; Feng, Shun-Ching; Yub, Kuo-Hui; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2000-03 |
Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
|
Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen; Feng, Shun-Ching; Yu, Kuo-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-01 |
High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors
|
Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-12-01 |
Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
|
Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Shiou-Ying; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-07-26 |
Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
|
Liu, Wen-Chau; Pan, Hsi-Jen; Cheng, Shiou-Ying; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-07-05 |
Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
|
Cheng, Shiou-Ying; Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-06 |
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT
|
Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen |
| 國立成功大學 |
1999-04-12 |
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors
|
Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou |
| 國立成功大學 |
1999-04-05 |
Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
|
Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Yu, Kuo-Hui; Feng, Shung-Ching; Lour, Wen-Shiung |
顯示項目 1-25 / 29 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
|
