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Institution	Date	Title	Author
臺大學術典藏	2019-12-27T07:49:58Z	Novel Ga 2 O 3 (Gd 2 O 3 ) passivation techniques to produce low D it oxide-GaAs interfaces	Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:58Z	Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy	Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:58Z	Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy	Passlack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:58Z	Observation of inversion layers at GA2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy	Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:58Z	C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/accumulation device and surface passivation applications	Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:57Z	Insulator passivation of Ino 0.2Ga 0.8As-GaAs surface quantum wells	Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:13Z	Insulator passivation of In 0.2 Ga 0.8 As-GaAs surface quantum wells	Passlack, M; Hong, M; Harris, TD; Mannaerts, JP; Vakhshoori, D; Schnoes, ML; MINGHWEI HONG
臺大學術典藏	2018-09-10T06:28:13Z	Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions	Passlack, M; Hong, M; Schubert, EF; Zydzik, GJ; Mannaerts, JP; Hobson, WS; Harris, TD; MINGHWEI HONG
臺大學術典藏	2018-09-10T06:28:13Z	Novel Ga 2 O 3 (Ga 2 O 3) passivation techniques to produce low D it oxide-GaAs interfaces	Hong, M; Mannaerts, JP; Bower, JE; Kwo, J; Passlack, M; Hwang, W-Y; Tu, LW; MINGHWEI HONG
臺大學術典藏	2018-09-10T06:28:13Z	Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling	Passlack, M; Hong, M; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR; MINGHWEI HONG
臺大學術典藏	2018-09-10T06:28:12Z	A Ga 2 O 3 passivation technique compatible with GaAs device processing	Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:56:12Z	Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy	Passlack, M;Hong, M;Mannaerts, JP;Kwo, JR;Tu, LW; Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:56:12Z	Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy	Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG; Hong, M;Passlack, M;Mannaerts, JP;Kwo, J;Chu, SNG;Moriya, N;Hou, SY;Fratello, VJ
臺大學術典藏	2018-09-10T05:56:12Z	Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy	Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:56:11Z	GaAs surface passivation using in-situ oxide deposition	Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:56:11Z	C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications	Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:56:10Z	Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy	Passlack, M;Hong, M; Passlack, M; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:56:10Z	Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy	Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:12Z	In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity	Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M
臺大學術典藏	2018-09-10T05:21:12Z	Ga2O3 films for electronic and optoelectronic applications	Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:11Z	Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structures	Passlack, M;Hong, M;Mannaerts, JP;Chiu, TH;Mendonca, CA;Centanni, JC; Passlack, M; Hong, M; Mannaerts, JP; Chiu, TH; Mendonca, CA; Centanni, JC; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:10Z	Ga203 films for electronic and optoelectronic ap	Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:10Z	GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES	Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:58Z	Dielectric properties of electron-beam deposited Ga2O3 films	Passlack, M;Hunt, NEJ;Schubert, EF;Zydzik, GJ;Hong, M;Mannaerts, JP;Opila, RL;Fischer, RJ; Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; Hong, M; Mannaerts, JP; Opila, RL; Fischer, RJ; MINGHWEI HONG
國立成功大學	2014-04	High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations	Wang, C. H.; Doornbos, G.; Astromskas, G.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Huang, M. L.; Lin, C. H.; Hsieh, C. H.; Chang, Y. S.; Lee, T. L.; Chen, Y. Y.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L. -E.; Droopad, R.; Passlack, M.; Diaz, C. H.

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