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Showing items 1-10 of 27 (3 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Novel Ga 2 O 3 (Gd 2 O 3 ) passivation techniques to produce low D it oxide-GaAs interfaces
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Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Observation of inversion layers at GA2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Insulator passivation of Ino 0.2Ga 0.8As-GaAs surface quantum wells
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Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:13Z |
Insulator passivation of In 0.2 Ga 0.8 As-GaAs surface quantum wells
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Passlack, M; Hong, M; Harris, TD; Mannaerts, JP; Vakhshoori, D; Schnoes, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions
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Passlack, M; Hong, M; Schubert, EF; Zydzik, GJ; Mannaerts, JP; Hobson, WS; Harris, TD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Novel Ga 2 O 3 (Ga 2 O 3) passivation techniques to produce low D it oxide-GaAs interfaces
|
Hong, M; Mannaerts, JP; Bower, JE; Kwo, J; Passlack, M; Hwang, W-Y; Tu, LW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling
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Passlack, M; Hong, M; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR; MINGHWEI HONG |
Showing items 1-10 of 27 (3 Page(s) Totally)
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