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Showing items 21-27 of 27 (2 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T05:21:11Z |
Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structures
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Passlack, M;Hong, M;Mannaerts, JP;Chiu, TH;Mendonca, CA;Centanni, JC; Passlack, M; Hong, M; Mannaerts, JP; Chiu, TH; Mendonca, CA; Centanni, JC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES
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Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Dielectric properties of electron-beam deposited Ga2O3 films
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Passlack, M;Hunt, NEJ;Schubert, EF;Zydzik, GJ;Hong, M;Mannaerts, JP;Opila, RL;Fischer, RJ; Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; Hong, M; Mannaerts, JP; Opila, RL; Fischer, RJ; MINGHWEI HONG |
| 國立成功大學 |
2014-04 |
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
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Wang, C. H.; Doornbos, G.; Astromskas, G.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Huang, M. L.; Lin, C. H.; Hsieh, C. H.; Chang, Y. S.; Lee, T. L.; Chen, Y. Y.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L. -E.; Droopad, R.; Passlack, M.; Diaz, C. H. |
| 國立成功大學 |
2013-09-30 |
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
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Wang, C. H.; Wang, S. W.; Doornbos, G.; Astromskas, G.; Bhuwalka, K.; Contreras-Guerrero, R.; Edirisooriya, M.; Rojas-Ramirez, J. S.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Hsieh, C. H.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L-E; Droopad, R.; Passlack, M.; Diaz, C. H. |
| 國立成功大學 |
2013-07-01 |
MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
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Ramvall, P.; Wang, C. H.; Astromskas, G.; Vellianitis, G.; Holland, M.; Droopad, R.; Samuelson, L.; Wernersson, L. E.; Passlack, M.; Diaz, C. H. |
Showing items 21-27 of 27 (2 Page(s) Totally)
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