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"pi t w"的相關文件
顯示項目 6-30 / 58 (共3頁)
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| 臺大學術典藏 |
2020-03-31T08:25:11Z |
Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template
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Chen, Y. F.; Chen, K. H.; Chen, L. C.; Lin, J. G.; Pi, T. W.; Huang, Y. F.; Lin, H. J.; Chong, C. W.; Huang, M. J.; Han, H. C.; Lin, Y. K.; Chiu, J. M. |
| 臺大學術典藏 |
2020-01-13T08:22:31Z |
Initial stages of ultra thin Ti film growth on Si(1 1 1)-7 × 7 surface
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Hsu, H.F.; Lu, M.C.; Fang, C.K.; Chen, L.J.; Hsiao, H.L.; Pi, T.W.; MING-CHANG LU |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
High-resolution core-level photoemission study of CF 4 -treated Gd 2 O 3 (Ga 2 O 3 ) gate dielectric on Ge probed by synchrotron radiation
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Pi, T.-W.;Huang, M.L.;Lee, W.C.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
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Chang, Y.H.;Huang, M.L.;Chang, P.;Lin, C.A.;Chu, Y.J.;Chen, B.R.;Hsu, C.L.;Kwo, J.;Pi, T.W.;Hong, M.; Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Electronic structures of Ga 2 O 3 (Gd 2 O 3 ) gate dielectric on n-Ge(001) as grown and after CF 4 plasma treatment: A synchrotron-radiation photoemission study
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Pi, T.-W.;Lee, W.C.;Huang, M.L.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(0 0 1)-4 ? 6 surface
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Chang, Y.H.;Huang, M.L.;Chang, P.;Shen, J.Y.;Chen, B.R.;Hsu, C.L.;Pi, T.W.;Hong, M.;Kwo, J.; Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
Surface-atom core-level shift in GaAs(111)A-2
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MINGHWEI HONG; Kwo, J.; Hong, M.; Wertheim, G.K.; Chiang, T.-H.; Huang, M.-L.; Chen, B.-R.; Pi, T.-W. |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors
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Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Effective passivation of In 0.2Ga 0.8As by HfO 2 surpassing Al 2O 3 via in-situ atomic layer deposition
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Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG; Lin, C.A.; Chang, Y.H.; Chang, Y.H.;Lin, C.A.;Liu, Y.T.;Chiang, T.H.;Lin, H.Y.;Huang, M.L.;Lin, T.D.;Pi, T.W.;Kwo, J.;Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study
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Chu, R.-L.;Hsueh, W.-J.;Chiang, T.-H.;Lee, W.-C.;Lin, H.-Y.;Lin, T.-D.;Brown, G.J.;Chyi, J.-I.;Huang, T.S.;Pi, T.-W.;Kwo, J.R.;Hong, M.; Chu, R.-L.; Hsueh, W.-J.; Chiang, T.-H.; Lee, W.-C.; Lin, H.-Y.; Lin, T.-D.; Brown, G.J.; Chyi, J.-I.; Huang, T.S.; Pi, T.-W.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 ? 2 surface: A high-resolution core-level photoemission study
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Pi, T.W.;Lin, H.Y.;Chiang, T.H.;Liu, Y.T.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study
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Pi, T.-W.;Lin, H.-Y.;Liu, Y.-T.;Lin, T.-D.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
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Chu, R.L.;Liu, Y.C.;Lee, W.C.;Lin, T.D.;Huang, M.L.;Pi, T.W.;Kwo, J.;Hong, M.; Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 ? 2 from atomic layer deposition
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Pi, T.W.;Lin, T.D.;Lin, H.Y.;Chang, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
High 庥/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)
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Chang, W.H.;Lin, T.D.;Liao, M.H.;Pi, T.W.;Kwo, J.;Hong, M.; Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer deposition
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Fanchiang, Y.-T.;Chiang, T.-H.;Pi, T.-W.;Wertheim, G.K.;Kwo, J.R.;Hong, M.; Fanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures
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Pi, T.W.;Lin, Y.H.;Fanchiang, Y.T.;Chiang, T.H.;Wei, C.H.;Lin, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
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Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study
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Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Surface electronic structure of epi germanium (001)-2 ? 1
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Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
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Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
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Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
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Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:11Z |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
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MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B. |
| 臺大學術典藏 |
2019-12-27T06:48:46Z |
Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template
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Chong, C. W.; Huang, M. J.; Han, H. C.; Lin, Y. K.; Chiu, J. M.; Huang, Y. F.; Lin, H. J.; Pi, T. W.; Lin, J. G.; Chen, L. C.; Chen, K. H.; Chen, Y. F.; Chong, C. W.; YANG-FANG CHEN et al. |
顯示項目 6-30 / 58 (共3頁)
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