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Institution Date Title Author
國立成功大學 2024-11-22 Effects of Chip Size and Thermally Oxidized Al x Ga2-x O3 Sidewall on the Optoelectrical Characteristics of AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes Wang;Tien-Yu;Lai;Wei-Chih;Xie;Qiao-Ju;Chang;Sheng-Po;Kuo;Cheng-Huang;Sheu;Jinn-Kong
國立成功大學 2024-05-14 Thermally Oxidized Alx Ga2-x O3/n-Al0.6Ga0.4N:Si Unipolar Resistive Random-Access Memory Wang;Tien-Yu;Lai;Wei-Chih;Xie;Qiao-Ju;Chang;Sheng-Po;Kuo;Cheng-Huang;Sheu;Jinn-Kong
國立成功大學 2023-02-6 The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes Wang;Tien-Yu;Lai;Wei-Chih;Xie;Qiao-Ju;Yang;Shun-Hao;Chang;Sheng-Po;Kuo;Cheng-Huang;Sheu;Jinn-Kong

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