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Showing items 26-32 of 32  (4 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2004 High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mm applications grown by molecular beam epitaxy J.S. Wang;A.R. Kovsh;R.S. Hsiao;L.P. Chen;J.F. Chen;T.S. Lay;J.Y. Chi
國立東華大學 2003-12 1.3 μm InAs-InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor DBRs 祁錦雲; Jim-Yong Chi; J. S. Wang; N. A. Maleev; A. R. Kovsh; R. S. Hsiao; C. M. Lai; L. Wei; J. F. Chen; J. A. Lott; N. N. Ledentsov; V. M. Ustinov; J. Y. Chi
國立東華大學 2003-12 Long-Wavelength Ridge-Waveguide InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy 祁錦雲; Jim-Yong Chi; J. S. Wang;A. R. Kovsh; R. S. Hsiao; G. Lin; D. A. Livshits; I. F. Chen; Y. T. Wu; L. P. Chen; J. F. Chen; J. Y. Chi
國立東華大學 2003-12 1.3 m InGaAsN Edge Emitting Lasers with Near-Circular Beam Divergence 祁錦雲; Jim-Yong Chi; G. Lin; I. F. Chen;J. S. Wang; R. S. Hsiao; L. Wei;J. Y. Chi; D. A. Livshits; A. R. Kovsh;V. M. Ustinov
國立東華大學 2003-09 1.3 micron single lateral mode lasers based on InAs QDs and InGaAsN quantum wells 祁錦雲; Jim-Yong Chi; A.R.Kovsh; D.A.Livshits; N.A.Maleev; A.E.Zhukov; V.M.Ustinov; J.S.Wang; R.S.Hsiao; G.Lin; J.Y.Chi; N.N.Ledentsov
國立東華大學 2003-06-23 High-performance Ridge-waveguide Multi-stack (N=2, 5 and 10) InAs/InGaAs/GaAs Quantum Dot Lasers of 1.3 m range 祁錦雲; Jim-Yong Chi; A.R.Kovsh; J.S.Wang; R.S.Hsiao; L.P.Chen; D.A.Livshits; G.Lin; J.Y.Chi; V.M.Ustinov
國立東華大學 2003-06 Structural and optical properties of Ga(As,N)/GaAs epilayers grown with continuous and pulsed deposition and nitridization 祁錦雲; Jim-Yong Chi; Soshnikov; A. R. Kovsh; V. M. Ustinov; N. V. Kryzhanovskaya; N. N. Ledentsov; D. Bimberg; H. Kirmse; W. Neumann; O. M. Gorbenko; J. S. Wang; R. S. Hsiao; J. Chi

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