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Institution
Date
Title
Author
國立高雄師範大學
2002
Stability of Measurement of Heterostructure Bipolar Transistors Current-Voltage Characteristics with Thermal Effect
Ruey-Lue Wang;S. C. Wei;Y. K. Su; 王瑞祿
國立高雄師範大學
2002
Current gain improvement of the AlGaAs/GaAs Hetero-junction Bipolar Transistor by Ammonium sulfide treatment
Ruey-Lue Wang; 王瑞祿;陳力民;廖森茂;蘇炎坤;魏上欽;林俊良;陳文章;王永昇
國立高雄師範大學
2001-12
Thermal Impedance Variation of HBT with High Junction Temperature
Ruey-Lue Wang;S. C. Wey;Y. K. Su; 王瑞祿
國立高雄師範大學
2001-11
Current gain improvement of the AlGaAs/GaAs Hetero-junction Bipolar Transistors
Ruey-Lue Wang; 王瑞祿;陳力民;廖森茂;蘇炎坤;魏上欽;林俊良;王瑞祿;陳文章;王永昇
國立高雄師範大學
2001-11
由電壓對電流現象決定磷化銦鎵/砷化鎵HBT之射極平臺蝕刻終點
Ruey-Lue Wang; 王瑞祿;陳力民;廖森茂;蘇炎坤;魏上欽;林俊良;王瑞祿;陳文章;王永昇
國立高雄師範大學
2001-02
產學合作計劃---砷化鎵系之銅製程及HBT大信號模型之研究(I)
王瑞祿; Ruey-Lue Wang
國立高雄師範大學
2000-08
砷化鎵系之HEMT/HBT微波元件與電路製程之研究---總計畫(III)
蘇炎坤;王瑞祿;王永和; Ruey-Lue Wang
國立高雄師範大學
2000-08
砷化鎵之HEME/HBT微波元件 與電路製程之研究---子計畫三:砷化鎵之被動元件與特殊製程及寄生效應之研究(III)
王瑞祿; Ruey-Lue Wang
國立高雄師範大學
1999-08
砷化鎵系之HEMT/HBT微波元件與電路製程之研究---總計畫(II)
王瑞祿;蘇炎坤;王永和; Ruey-Lue Wang
國立高雄師範大學
1999-08
砷化鎵之HEME/HBT微波元件與電路製程之研究---子計畫III:砷化鎵之被動元件與特殊製程及寄生效應之研究(II)
王瑞祿; Ruey-Lue Wang
國立高雄師範大學
1998-08
GaAs MMIC被動元件與MESFET偏壓電路之研製
王瑞祿; Ruey-Lue Wang
國立高雄師範大學
1998-08
GaAs-Based微波主動元件之研究---子計畫III:HBT高頻元件等效電路之研究
王瑞祿; Ruey-Lue Wang
國立高雄師範大學
1998-08
GaAs-Based微波主動元件之研究---總計畫
蘇炎坤;王永和;王瑞祿; Ruey-Lue Wang
國立高雄師範大學
1998
Simulation and Analysis of Negative Differential Resistance Devices and Circuits by Load-line Method and PSPICE
Ruey-Lue Wang;K. J. Gan;Y. K. Su; 王瑞祿
國立高雄師範大學
1997-08
MMIC微波主動元件之研製
蘇炎坤;王永和;王瑞祿; Ruey-Lue Wang
國立高雄師範大學
1997
Modeling of Three-peak Current-voltage Characteristics with Two Resonant Tunneling Diodes Connected in Series
Ruey-Lue Wang;K. J. Gan;Y. K. Su; 王瑞祿
國立高雄師範大學
1995
The St udy of GaAs/InGaAs Delta-doping Resnant Interband Tunneling Diode
Ruey-Lue Wang;C. C. Yang;K. C. Huang;Y. K. Su; 王瑞祿
國立高雄師範大學
1994
P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-valley Current Ratio of 144 At Room Temperature
Ruey-Lue Wang;H. H. Tsai;Y. K. Su;H. H. Lin;T.L. Lee; 王瑞祿
國立高雄師範大學
1993
Delta-Doping Inter band Tunneling diode by Metal-Organic Chemical Vapor Deposition
Ruey-Lue Wang;Y. K. Su;R. L. Wang;H. H. Tsai; 王瑞祿
國立高雄師範大學
1993
Double Quantum Well Resonant Tunneling Diode
Ruey-Lue Wang;H. H. Tsai;Y. K. Su;T. S. Wu;C. H. Su; 王瑞祿
國立高雄師範大學
1992
The Current-Voltage Characteristics of a Delta-Doped Triple-Barrier Switch
Ruey-Lue Wang;Y. K. Su;C. H. Su;H.H. Tsai; 王瑞祿
國立高雄師範大學
1992
The Switching Characteristics in Sawtooth Type Superlattice with Asymmetric Doping
Ruey-Lue Wang;H. H. Tsai;Y. K. Su; 王瑞祿
國立高雄師範大學
1992
Delta-Doped Layer and Related Interband Tunnelin Giode by MOCVD
Ruey-Lue Wang;Y. K. Su;H. H. Tsai;C.H. Su; 王瑞祿
國立高雄師範大學
1992
GaAs Negative Differential Resistance Devices
Ruey-Lue Wang;Y. K. Su;H. H. Tsai; 王瑞祿
國立高雄師範大學
1992
Delta-Doped Triple-Barrier Switching Device
Ruey-Lue Wang;T. S. Wu;Y. K. Su;H. H. Tsai; 王瑞祿
國立高雄師範大學
1991
Negative Differential Resistance in GaAs Delta-Doping Tunneling Diodes
Ruey-Lue Wang;Y. K. Su;Y. H. Wang; 王瑞祿
國立高雄師範大學
1990-06
A Novel Negative Differential Resistance in Delta-Doping Induced Homojunction Double Barrier Quantum Well Diode
Ruey-Lue Wang;Y. K. Su;Y. H. Wang;K. F. Yarn; 王瑞祿
國立高雄師範大學
1990
Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature
Ruey-Lue Wang;Y. K. Su;Y. H. Wang;K. F. Yarn; 王瑞祿
國立高雄師範大學
1990
Electronic Transport in Graded-Period Delta-Doped Superlattice
Ruey-Lue Wang;W. C. Liu;W. S. Lour;C. Y. Sun;C. C. Hong; 王瑞祿
國立高雄師範大學
1989
Superlattice gate power MESFET grown by MBE
Ruey-Lue Wang;W. C. Liu;C.Y. Chang;W. C. Hsu;W. S. Lour; 王瑞祿
國立高雄師範大學
1989
Superlattice gate and graded superlattice buffer for microwave power metal–semiconductor field effect transistor grown by molecular?beam epitaxy
Ruey-Lue Wang;W. C. Liu;C. Y. Chamg ; W. C. Hsu;W. S. Lour; 王瑞祿
Showing items 126-156 of 156 (4 Page(s) Totally)
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