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Institution Date Title Author
臺大學術典藏 2018-09-10T09:50:25Z Function of the Upper/Lower Parasitic BJTs in 40nm PD SOI NMOS Device due to the Back-Gate Bias Effect A. P. Chuang;S. I. Su;Z. H. Yang;J. B. Kuo;D. Chen;C. S. Yeh; A. P. Chuang; S. I. Su; Z. H. Yang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T09:50:25Z Function of the Upper/Lower Parasitic BJTs in 40nm PD SOI NMOS Device due to the Back-Gate Bias Effect A. P. Chuang;S. I. Su;Z. H. Yang;J. B. Kuo;D. Chen;C. S. Yeh; A. P. Chuang; S. I. Su; Z. H. Yang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO

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